Light-emitting diode with modulation-doped current expansion layer
A technology of current spreading layer and light-emitting diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high power consumption of light-emitting diodes, low photoelectric conversion efficiency, and unsatisfactory conductivity of the current spreading layer, so as to improve the lateral conductance efficiency, improve photoelectric conversion efficiency, and low operating voltage
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[0014] Example one figure 1 As shown, a light-emitting diode with a modulated doped current spreading layer includes a substrate 1, a first electrode 2 is connected under the substrate 1, and a first type current spreading layer is sequentially connected on the top of the substrate 1. 3. The first type confinement layer 4, the active layer 5, the second type confinement layer 6, the second type current spreading layer 7, and the second electrode 8, the second electrode 8 is a P pole, and the first electrode 2 is an N pole;
[0015] Three delta doped layers 9 are connected at intervals along the growth direction of the second-type current spreading layer 7, and the number of delta doped layers 9 can be arbitrarily selected between 1 and 50.
[0016] Preferably, the thickness of the Delta doped layer 9 is ≤ 1 nm.
[0017] The Delta doped layer 9 can be composed of one or several P-type doping sources among Be, Mg, Zn, Cd, and C; preferably, the concentration of the P-type doping source...
Example Embodiment
[0020] Embodiment two figure 2 As shown, a light-emitting diode with a modulated doped current spreading layer includes a substrate 1, a first electrode 2 is connected under the substrate 1, and a first type current spreading layer is sequentially connected on the top of the substrate 1. 3. The first type confinement layer 4, the active layer 5, the second type confinement layer 6, the second type current spreading layer 7 and the second electrode 8, the second electrode 8 is an N electrode, and the first electrode 2 is a P electrode;
[0021] Three delta doped layers 9 are connected at intervals along the growth direction of the second-type current spreading layer 7, and the number of delta doped layers 9 can be arbitrarily selected between 1 and 50.
[0022] Preferably, the thickness of the Delta doped layer 9 is ≤ 1 nm.
[0023] The Delta doping layer 9 can be composed of one or several N-type doping sources among Si, Sn, S, Se, and Te; preferably, the concentration of the N-typ...
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