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Light-emitting diode with modulation-doped current expansion layer

A technology of current spreading layer and light-emitting diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high power consumption of light-emitting diodes, low photoelectric conversion efficiency, and unsatisfactory conductivity of the current spreading layer, so as to improve the lateral conductance efficiency, improve photoelectric conversion efficiency, and low operating voltage

Inactive Publication Date: 2012-09-12
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to improve the current spreading performance of the current spreading layer, the current spreading layer of the existing light-emitting diode usually uniformly dopes doping sources such as Si and Mg in the substrate layer such as the AlGaAs material layer to improve the current spreading performance, but this The conductivity of the current spreading layer is still unsatisfactory, especially the current cannot fully expand in the horizontal direction, resulting in a high working voltage of the light-emitting diode, that is, the power consumption of the light-emitting diode is still high, and the photoelectric conversion efficiency is low

Method used

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  • Light-emitting diode with modulation-doped current expansion layer
  • Light-emitting diode with modulation-doped current expansion layer

Examples

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Embodiment 1

[0014] Embodiment one, figure 1 As shown, a light-emitting diode with a modulation doped current spreading layer includes a substrate 1, a first electrode 2 is connected below the substrate 1, and a first-type current spreading layer is sequentially connected above the substrate 1 3. The first-type confinement layer 4, the active layer 5, the second-type confinement layer 6, the second-type current spreading layer 7 and the second electrode 8, the second electrode 8 is a P pole, and the first electrode 2 is an N pole;

[0015] Three Delta-doped layers 9 are connected at intervals along the growth direction of the second-type current spreading layer 7, and the number of Delta-doped layers 9 can be arbitrarily selected from 1 to 50.

[0016] Preferably, the thickness of the Delta-doped layer 9 is ≤1 nm.

[0017] The Delta-doped layer 9 can be composed of one or more P-type dopant sources in Be, Mg, Zn, Cd, C; the concentration of the P-type dopant source in the preferred Delta-...

Embodiment 2

[0020] Embodiment two, figure 2 As shown, a light-emitting diode with a modulation doped current spreading layer includes a substrate 1, a first electrode 2 is connected below the substrate 1, and a first-type current spreading layer is sequentially connected above the substrate 1 3. The first-type confinement layer 4, the active layer 5, the second-type confinement layer 6, the second-type current spreading layer 7 and the second electrode 8, the second electrode 8 is an N pole, and the first electrode 2 is a P pole;

[0021] Three Delta-doped layers 9 are connected at intervals along the growth direction of the second-type current spreading layer 7, and the number of Delta-doped layers 9 can be arbitrarily selected from 1 to 50.

[0022] Preferably, the thickness of the Delta-doped layer 9 is ≤1 nm.

[0023] The Delta-doped layer 9 can be composed of one or more N-type dopant sources in Si, Sn, S, Se, Te; the concentration of the N-type dopant source in the Delta-doped lay...

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Abstract

The invention discloses a light-emitting diode with a modulation-doped current expansion layer. The light-emitting diode comprises a substrate. A first electrode is connected below the substrate. A first-type current expansion layer, a first limiting layer, an active layer, a second-type limiting layer, a second-type current expansion layer and a second electrode are sequentially connected above the substrate. X delta-doped layers are connected at intervals along the growing direction of the second-type current expansion layer, wherein X is more than or equal to 1 and is less than or equal to 50. Preferably, the thickness of the delta-doped layers is less than or equal to 1nm. The light-emitting diode with the modulation-doped current expansion layer has the advantages that the transverse conductivity of the current expansion layer can be improved, the forward working voltage of the light-emitting diode is effectively reduced and the photovoltaic conversion efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to a light-emitting diode, especially a light-emitting diode with a modulation doping current spreading layer. Background technique [0002] At present, semiconductor light-emitting diodes have been widely used in economic life such as display, lighting and communication. The photoelectric conversion efficiency of a light-emitting diode can be determined by the ratio of its output light power to its input electrical power. In order to improve the photoelectric conversion efficiency of light-emitting diodes, we can start from two aspects: one is to increase the light power output by light-emitting diodes, such as reducing total reflection by surface roughening, thereby improving the light extraction efficiency; the other is to reduce the electrical power input by light-emitting diodes, For example, by reducing the operating voltage to reduce power consumption. [0003] When current is injected into the active region from the top ...

Claims

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Application Information

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IPC IPC(8): H01L33/14
Inventor 陈凯轩林志伟蔡建九林志园
Owner XIAMEN CHANGELIGHT CO LTD
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