Preparation method of CdZnSeS quantum dots
A technology of quantum dots and compounds, which is applied in the field of CdZnSeS quantum dots, can solve the problems of inability to synthesize quantum dots with different fluorescence, limited adjustment ability, uncertain subjective and objective factors, etc., so as to reduce the requirements of production equipment and reaction process Continuous, easy-to-use effects
Active Publication Date: 2012-09-19
GUANGDONG POLY OPTOELECTRONICS
View PDF4 Cites 20 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] CdZnSeS quantum dots belong to type II-VI quantum dots, and are the most widely and deeply researched quantum dot systems in the academic circle. Into the reaction system to prepare CdZnSeS quantum dots, these methods are only suitable for the preparation of trace or a small amount of samples for scientific research, but for large-scale industrial production this method has some disadvantages: 1
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Example Embodiment
[0028] The preparation of embodiment 1 cadmium source
[0029] Mix 1 mol of cadmium acetate and 4 mol of oleic acid, vacuumize and fill nitrogen three times repeatedly, react at 260°C for 1 hour, cool to room temperature, add 1-octadecene to make cadmium oleate with a concentration of 0.1 mol / L 1-octadecene solution, spare.
Example Embodiment
[0030] The preparation of embodiment 2 cadmium sources
[0031] Mix 1 mol of cadmium oxide and 2 mol of oleic acid, vacuumize and fill nitrogen three times repeatedly, react at 280°C for 2 hours, cool to room temperature, add 1-octadecene to make cadmium oleate with a concentration of 0.1 mol / L 1-octadecene solution, spare.
Example Embodiment
[0032] The preparation of embodiment 3 zinc sources
[0033] Mix 1 mol of zinc acetate and 2 mol of oleic acid, repeatedly evacuate and fill with nitrogen for 3 times, react at 270°C for 1 hour to obtain zinc oleate, cool to room temperature, and set aside.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
Login to view more Abstract
The invention relates to a preparation method of CdZnSeS quantum dots. The preparation method comprises the following steps: (1) evenly mixing zinc sources, selenium sources and organic solvent, leading in shielding gas, and heating to 220-290 DEG C; or evenly mixing inorganic zinc compounds, the zinc sources, fatty acid and the organic solvent, leading in the shielding gas, and heating to 220-290 DEG C; (2) slowly adding cadmium sources dropwise, monitoring wavelengths of fluorescence emission peaks of intermediate products in real time, and stopping adding the cadmium sources dropwise when the wavelengths of the fluorescence emission peaks of target products are achieved; (3) slowly adding stoichiometric sulfur sources or mixed liquid of the sulfur sources and the zinc sources dropwise; and (4) reacting for 0.5-24h at 220-290 DEG C to obtain the CdZnSeS quantum dots with different emission wavelengths. The preparation method of the CdZnSeS quantum dots is simple to operate, the reaction process is continuous and stable, a rapid injection method is not required, the requirements for production equipment are lowered, and the reaction temperature is low. Fluorescence emission spectrums of the products can be controlled by adjusting addition amount of the cadmium sources according to real-time monitoring results.
Description
technical field [0001] The invention relates to a method for preparing quantum dots, in particular to a method for preparing CdZnSeS quantum dots with a spectral range of 450-630 nm by adopting a full-drop method Background technique [0002] Quantum dots are also called semiconductor nanocrystals. When stimulated by light or electricity, quantum dots will emit light in a certain wavelength range. The range and intensity of the emission spectrum are determined by the composition, size and shape of quantum dots. This feature enables quantum dots to be used as luminescent materials in biological detection, anti-counterfeiting, LED, display and optoelectronic devices and other fields. [0003] CdZnSeS quantum dots belong to type II-VI quantum dots, and are the most widely and deeply researched quantum dot systems in the academic circle. Into the reaction system to prepare CdZnSeS quantum dots, these methods are only suitable for the preparation of trace or a small amount of sa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more IPC IPC(8): C09K11/88
Inventor 张涛李晓红刘江国李阳
Owner GUANGDONG POLY OPTOELECTRONICS
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap