Film LED (light-emitting diode) chip device as well as manufacturing method and application thereof

Abstract

The invention provides a film LED (light-emitting diode) chip device, comprising a GaN-based epitaxial film base which is provided with an etching groove, and a fixed film which is coated on a GaN-based epitaxial film, wherein a metal reflection layer is attached to the surface of the P-shaped semiconductor layer of the GaN-based epitaxial film base, passive films are deposited on the metal reflection layer and the GaN-based epitaxial film base to form the GaN-based epitaxial film, the passive film on the surface of the metal reflection layer and the passive film on the bottom surface of the etching groove are respectively provided with a hollowed-out area, a P pole multilayer metal bonding layer and a N pole multilayer metal bonding layer are respectively arranged on the corresponding hollowed-out area, and a P pole conductive support thick metal layer and an N pole conductive support thick metal layer are respectively arranged on the P pole multilayer metal bonding layer and the N pole multilayer metal bonding layer. The invention also provides a manufacturing method and application of the film LED chip device. According to the invention, the occurrence rate of wafer fracture and the probability of wafer deformation in the subsequent laser stripping process are reduced, and the yield of products is improved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a thin-film LED chip device and its manufacturing method and application. Background technique [0002] Existing thin-film LED chip devices use excimer laser lift-off substrate technology to peel off the substrate (sapphire substrate or SiC substrate) growing GaN materials on the basis of traditional flip-chip structure chips, exposing the LED thin-film structure . [0003] see figure 1 , the traditional thin-film LED chip device has the following problems: there are unfilled gaps 4 between the metal bumps 2 used to combine the GaN epitaxial layer film 1 and the flip-chip substrate 3 in the flip-chip structure chip, and the GaN epitaxial layer film 1 is partially lacking Effective support and heat sink, so that it is easy to cause chip cracking or structural change due to instantaneous mechanical vibration or instantaneous thermal effect during the laser lift-off process, resultin...

AI Technical Summary

Problems solved by technology

[0003] see figure 1 , the traditional thin-film LED chip device has the following problems: there are unfilled gaps 4 between the metal bumps 2 used to combine the GaN epitaxial layer film 1 and the flip-chip substrate 3 in the flip-chip structure chip, and the GaN epitaxial layer film 1 is partially lacking Effective support and heat sink, so that it is easy to cause chip cracking or structural change due to instantaneous mechanical vibration or instantaneous thermal effect during the laser lift-off process, resulting in failure, which eventually leads to low yield of thin-film LED chip devices

[0004] see figure 2 , the traditional thin-film LED chip device needs to separate the chip from the substrate 5 one by one during the laser lift-off process. This process is slow and time-consuming, and it is not easy to achieve mass production; The unit separation before the process divides the substrate into smaller individuals, and the stripped substrate cannot be recycled and reused, resulting in waste of resources and increased production costs

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