SOS substrate with reduced stress

一种基板、蓝宝石基板的技术，应用在电气元件、晶体管、电固体器件等方向，能够解决电子迁移率下降等问题

Active Publication Date: 2012-09-19
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is reported that thus a change occurs in the conductor of silicon, and the electron mobility drops to about 80% (for example, see Non-Patent Document 2 and Non-Patent Document 3)

Method used

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  • SOS substrate with reduced stress
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  • SOS substrate with reduced stress

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] First grow a 200nm thick oxide film on a silicon substrate (thickness 625μm, diameter 150mm). at 55KeV and 7.0×10 16 atom / cm 2 A dose of hydrogen ions (H + ). The surfaces of both the sapphire substrate and the silicon substrate were subjected to ion beam activation treatment and bonded together at 200°C. The two substrates were heat-treated at 225° C. for 24 hours and temporarily bonded together, and then cooled to room temperature. Subsequently, the bonded substrates were placed on a hot plate at 200° C., and a mechanical impact was applied to the bonded interface to cause peeling, thereby transferring the silicon film to the sapphire substrate. This confirmed the transfer of the silicon film to the entire surface of the sapphire substrate. The silicon layer of the substrate was polished by CMP to have a thickness of 200 nm. figure 2 The results of Raman shift measurement of this silicon film are shown. The Raman shift of the central part is 520.94cm -1 , the...

Embodiment 2

[0085] First grow a 200nm thick oxide film on a silicon substrate (thickness 625μm, diameter 150mm). at 55KeV and 7.0×10 16 atom / cm 2 A dose of hydrogen ions (H + ). The surfaces of both the sapphire substrate and the silicon substrate were subjected to plasma activation treatment and bonded together at 350°C. The two substrates were heat-treated at 225° C. for 24 hours and temporarily bonded together, and then cooled to room temperature. Subsequently, the bonded substrates were heated to 300° C. on a hot plate, and a mechanical impact was applied to the bonded interface to cause peeling, thereby transferring the silicon film to the sapphire substrate. This confirmed the transfer of the silicon film to the entire surface of the sapphire substrate. The silicon layer of the substrate was polished by CMP to have a thickness of 200 nm. The Raman shift of the central part is 521.28cm -1 , the Raman shift of the peripheral part is 521.10cm -1 . The Raman shift of bulk silic...

Embodiment 3

[0087] First grow a 200nm thick oxide film on a silicon substrate (thickness 625μm, diameter 150mm). at 55KeV and 7.0×10 16 atom / cm 2 A dose of hydrogen ions (H + ). The surfaces of both the sapphire substrate and the silicon substrate were subjected to plasma activation treatment and bonded together at 200°C. The two substrates were heat-treated at 225° C. for 24 hours and temporarily bonded together, and then cooled to room temperature. Subsequently, the bonded substrates were heated to 250° C. on a hot plate, and irradiated with YAG laser light having a wavelength of 523 nm. A mechanical shock is applied to the bonded interface to cause debonding, thereby transferring the silicon film to the sapphire substrate. This confirmed the transfer of the silicon film to the entire surface of the sapphire substrate. The silicon layer of the substrate was polished by CMP to have a thickness of 200 nm. The Raman shift of the central part is 521.25cm -1 , the Raman shift of the ...

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Abstract

There is provided an SOS substrate with reduced stress. The SOS substrate is a silicon-on-sapphire (SOS) substrate comprising a sapphire substrate and a monocrystalline silicon film on or above the sapphire substrate. The stress of the silicon film of the SOS substrate as measured by a Raman shift method is 2.5*10 <8> Pa or less across an entire in-plane area of the SOS substrate.

Description

technical field [0001] The present invention relates to stress-reduced SOS substrates. Background technique [0002] Traditionally, from the 1960s to the present, silicon-on-sapphire (SOS) substrates including a handle substrate made of sapphire, which has high insulating properties and low dielectric loss, have been put into practical use. and high thermal conductivity. The SOS substrate is the earliest silicon-on-insulator (SOI) substrate, in which the SOI structure is realized by growing silicon heteroepitaxially on the R-plane (1012) of sapphire at high temperature. [0003] However, in recent years, SOI using the SIMOX method or the bonding method has become mainstream. Therefore, the SOS substrate is used only in devices incompatible with SOI in which the processing substrate is made of silicon, for example, such devices as high-frequency devices requiring low dielectric loss. In heteroepitaxial SOS, silicon is grown heteroepitaxially on sapphire whose lattice const...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/02H01L21/336H01L29/786
CPCH01L29/78603H01L21/86H01L21/76254H01L29/78657H01L27/1203
Inventor 秋山昌次
Owner SHIN ETSU CHEM CO LTD
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