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Production method of metal inductor

An inductor and metal technology, applied in the field of metal inductor preparation, can solve the problems of reducing the growth rate of holes, reducing the Q value of the inductance, and increasing the resistance of the interconnection line.

Inactive Publication Date: 2014-12-31
PEKING UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Although these covering layers can effectively improve the reliability of the metal interconnection, they will increase the resistance of the interconnection, thereby reducing the inductance Q value
In addition, Chai et al. can effectively reduce the growth rate of holes by replacing copper with Cu / CNT composite materials. The growth rate of holes in Cu / CNT composite materials is about a quarter of that of pure copper materials, but the same problem is resistance. 15% higher resistivity than pure copper

Method used

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  • Production method of metal inductor
  • Production method of metal inductor
  • Production method of metal inductor

Examples

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Embodiment Construction

[0015] The following examples illustrate the present invention, but these examples should not be construed as limiting the present invention.

[0016] Take copper inductors as an example:

[0017] (1) Prepare a P-type silicon substrate 1 with a relatively high resistivity (greater than 10Ω / cm), as shown in FIG. 1(A).

[0018] (2) Deposit a layer of oxide layer 2 on the silicon substrate, as shown in Figure 1(B). It is used to isolate the lower metal of the inductor from the silicon substrate. This oxide layer is SiO 2 , is generated by the CVD method.

[0019] (3) Evaporate to form the first layer of metal copper, which is used for the lead-out interconnection lines of the internal ports of the inductor, and realizes patterning. Before depositing copper, a layer of Cr is deposited. Then, the graphene layer 4 is selectively grown on the surface of the metal copper lower layer wiring 3 by chemical vapor deposition (as shown in FIG. 1(C)), and the specific growth process is ...

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Abstract

The invention discloses a production method of a metal inductor and belongs to the field of wireless communication devices. The production method includes covering metal of an induction coil with a graphene layer to improve electromigration resistance of the coil and prolong service life thereof according to unique crystal structure and physical property of graphene. Therefore, performance degradation of overall copper interconnections due to electromigration is reduced, and oxidation of the metal inductor in production and use is avoided. In addition, the graphene has excellent thermal conductivity, and accordingly fusing or dielectric breakdown of the induction coil due to overhigh local temperature is relieved.

Description

technical field [0001] The invention belongs to the field of wireless communication devices, and in particular relates to a method for preparing a metal inductor. Background technique [0002] With the rapid development of the wireless communication market, people's demand for portable devices continues to increase, which greatly promotes the development of radio frequency integrated circuits. At the same time, in order to meet the requirements of high performance and high integration of circuits, inductors, as an indispensable passive device in radio frequency circuits, usually need to be integrated on-chip, and the performance of inductors has also become an important factor affecting the performance of radio frequency integrated circuits. The metal material for preparing inductors can be tungsten, aluminum, copper, etc., but currently the more commonly used and mainstream on-chip integrated inductor material is copper. The main reasons for the decline in the performance ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 周梦杰李晨魏芹芹魏子钧任黎明傅云义黄如张兴
Owner PEKING UNIV
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