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Ferroelectric type memory cell, memory and preparation method thereof

A storage unit and ferroelectric technology, which is applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of low carrier mobility and poor crystallinity, achieve good interface compatibility and improve crystallinity , the effect of improving the carrier mobility

Inactive Publication Date: 2012-10-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

In the process of realizing the present invention, the applicant realized that the following technical problems exist in the prior art: the crystallinity of the organic semiconductor layer on the surface of the ferroelectric thin film is poor, resulting in low carrier mobility of this ferroelectric memory

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  • Ferroelectric type memory cell, memory and preparation method thereof
  • Ferroelectric type memory cell, memory and preparation method thereof
  • Ferroelectric type memory cell, memory and preparation method thereof

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] In a basic embodiment of the present invention, a ferroelectric memory cell based on an organic field effect transistor is disclosed. The ferroelectric memory unit comprises: a conductive substrate; a ferroelectric insulating dielectric layer formed on the conductive substrate; an organic insulating modification layer formed on the ferroelectric insulating dielectric layer for improving the crystallinity of the organic semiconductor layer; formed on the an organic semiconductor layer on the organic insulating modification layer; and a source electrode and a drain electrode formed on both sides above the organic semiconductor layer.

[0026] In the ferroelectric memory cell of this embodiment, an organic insulating ...

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Abstract

The invention discloses a ferroelectric type memory cell, a memory and a preparation method thereof, all based on an organic field effect transistor. The method of the invention introduces an organic insulation modification layer between the ferroelectric insulation medium layer and an organic semiconductor layer to improve an interface property of the ferroelectric insulation medium layer. The organic insulation modification layer has good interface compatibility with the organic semiconductor layer, and can enhance crystallinity of the organic semiconductor layer on a surface thereof, so as to raise carrier mobility of the ferroelectric type memory.

Description

technical field [0001] The invention relates to the technical field of memory in the microelectronics industry, in particular to a ferroelectric memory unit based on an organic field effect transistor, a memory and a preparation method thereof. Background technique [0002] With the deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing. Conventional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements. Therefore, the organic integrated circuit technology based on semiconductor materials such as organic polymers and small organic molecules that can realize these characteristics has received more and more attention under this trend. Organic field-effect transistor memories have broad application prospects in the field of organic electronics. [0003] At pr...

Claims

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Application Information

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IPC IPC(8): H01L51/10H01L51/30H01L51/40
Inventor 刘明王宏姬濯宇商立伟陈映平王艳花韩买兴刘欣
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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