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Lithium niobate substrate and manufacturing method thereof

A manufacturing method, lithium niobate technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve the problem of not being able to process cone shapes that are too small, limiting the brightness and size of patterned substrates Can not be too small, etc., to achieve the effect of shortening the production cycle, shortening the production cycle, and improving the luminous brightness

Inactive Publication Date: 2012-10-17
HANGZHOU SILAN AZURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limited processing accuracy of the existing photolithography and etching processes, it is limited that the cone shape that is too small in size cannot be processed, and if the cones are arranged too densely, there will be no stable epitaxial growth surface in the future. It will bring great difficulties to the epitaxial growth
Therefore, most of the patterned sapphire substrates on the market are like image 3 As shown, the size of the graphics should not be too small, such as the height hc is about 1.5um, the bottom diameter Dc is about 2.5um, the distance between graphics is about 0.5um, that is, the bottom angle θc is about 50 degrees, which greatly limits The effect of patterned substrate to improve brightness

Method used

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  • Lithium niobate substrate and manufacturing method thereof
  • Lithium niobate substrate and manufacturing method thereof
  • Lithium niobate substrate and manufacturing method thereof

Examples

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Effect test

Embodiment 1

[0041] if will be like Figure 4 The shown beam one 1 and beam two 2 are turned on at the same time, beam three 3 and beam four 4 are turned off at the same time, because beam one 1 and beam two 2 are coherent laser beams, and the angle between the coherent laser beams is 25 degrees, and Adjusting the light intensity of each laser beam, the spatial light intensity distribution can be generated in the overlapping area of ​​the double beams, and the spatial light intensity distribution is perpendicular to the plane formed by the intersection of the first beam 1 and the second beam 2, And present periodic changes, the periodic changes here are one-dimensional periodicity, such as Figure 5 shown. The first beam 1 and the second beam 2 are expanded into parallel beams suitable for the size of the lithium niobate substrate, the lithium niobate substrate is placed in the overlapping area of ​​the double beams, and the double beams of laser light irradiate the lithium niobate substr...

Embodiment 2

[0043] if will be like Figure 4 The beam three 3 and the beam four 4 shown are turned on at the same time, the beam one 1 and the beam two 2 are turned off at the same time, because the beam three 3 and the beam four 4 are coherent laser beams, and the angle between the coherent laser beams is 25 degrees, and Adjusting the light intensity of each laser beam, the spatial light intensity distribution can be generated in the overlapping area of ​​the double beams, and the spatial light intensity distribution is perpendicular to the plane formed by the intersection of the beam three 3 and the beam four 4, And present periodic changes, the periodic changes here are also one-dimensional periodicity, such as Figure 6 shown. The beam three 3 and the beam four 4 are expanded into parallel beams suitable for the size of the lithium niobate substrate, the lithium niobate substrate is placed in the overlapping area of ​​the double beams, and the double beams of laser light irradiate th...

Embodiment 3

[0045] if will be like Figure 4 Beam one 1, beam two 2, beam three 3, and beam four 4 are turned on at the same time, because beam one 1 and beam two 2 are coherent laser beams, beam three 3 and beam four 4 are coherent laser beams, and the coherent laser beam The angle between them is 25 degrees, and the light intensity of each laser beam is adjusted, the spatial light intensity distribution can be generated in the overlapping area of ​​the four beams of light, and the spatial light intensity distribution presents periodic changes, The periodic change here is two-dimensional periodicity, such as Figure 7 shown. The first beam 1, the second beam 2, the third beam 3, and the fourth beam 4 are expanded into parallel beams suitable for the size of the lithium niobate substrate, and the lithium niobate substrate is placed in the overlapping area of ​​the four beams , four laser beams irradiate the lithium niobate substrate at the same time for a period of time (10sec-10min) to...

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Abstract

The invention provides a manufacturing method of a lithium niobate substrate, wherein lithium niobate crystals grow to form the lithium niobate substrate, and photorefractive elements are doped in a growth process of the lithium niobate crystals. The invention further provides a lithium niobate substrate. The lithium niobate substrate is formed by growing the lithium niobate crystals. The lithium niobate substrate is the substrate doped with the photorefractive elements in the growth process of the lithium niobate crystals. The lithium niobate substrate is used for preparing LED (light emitting diode) chips to reduce defect density in epitaxial materials and production cost of LED, thereby effectively increasing luminance of LED, and quickening application of LED in the general lighting field.

Description

technical field [0001] The invention belongs to the technical field of LED manufacturing technology, and in particular relates to a lithium niobate substrate and a manufacturing method thereof. Background technique [0002] Since the commercialization of GaN (gallium nitride)-based LEDs in the early 1990s, after more than two decades of development, the structure of GaN-based LEDs has become mature and perfect, but there are few substrate materials that can be used for GaN-based LEDs. There are few, and there are very few substrate materials available for commercialization. At present, two substrate materials, sapphire and silicon carbide, are usually used on the market. Among them, sapphire is the most widely used due to its advantages of good chemical stability and relatively mature production technology, but there are also sapphire materials used as substrates for GaN-based LEDs. There are many problems. First, there is a lattice mismatch and a thermal stress mismatch in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30
Inventor 丁海生李东昇马新刚江忠永张昊翔王洋李超
Owner HANGZHOU SILAN AZURE