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Phosphorus diffusion method for crystal silicon wafer

A technology of crystalline silicon wafer and diffusion method, which is applied in the field of solar cells, can solve the problems of improving process conditions and increasing costs, and achieve the effects of relaxing matching conditions, increasing open circuit voltage, and reducing surface doping

Active Publication Date: 2015-04-22
YANCHENG CANADIAN SOLAR INC
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Problems solved by technology

However, the preparation of such high-efficiency batteries will inevitably face a series of problems such as improving process conditions, increasing costs, and verifying the feasibility of industrialization.

Method used

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  • Phosphorus diffusion method for crystal silicon wafer
  • Phosphorus diffusion method for crystal silicon wafer

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Embodiment 1

[0026] A phosphorus diffusion method for a crystalline silicon wafer, the steps comprising:

[0027] (1) Put the conventional monocrystalline 125 silicon wafer after texturing in a diffusion furnace, raise the temperature to 800 °C, and pass in phosphorus-carrying source nitrogen, dry oxygen and large nitrogen for the first constant source diffusion, and the diffusion time is 15 min ;The flow rate of phosphorus-carrying source nitrogen is 1.2L / min, the flow rate of dry oxygen is 0.9 L / min, and the flow rate of large nitrogen is 10 L / min;

[0028] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 900°C at a heating rate of 15°C / min, and feed dry oxygen and nitrogen at the same time to advance. The flow rate of dry oxygen is 1 L / min, and the The flow rate is 10 L / min, and the diffusion time is 26 min;

[0029] (3) Cool down to 830°C, and after the temperature stabilizes, the second constant source diffusion is carried out by introducing phosphor...

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Abstract

The invention discloses a phosphorus diffusion method for a crystal silicon wafer, which includes the following steps: (1) performing first constant-source diffusion by heating to 700 to 820 DEG C and feeding in the phosphorous carrying nitrogen, dry oxygen and big nitrogen; (2) performing high-temperature advancing by heating to 860 to 1000 DEG C at the temperature rise temperature of 10 to 25 degrees / min; (3) performing second constant-source diffusion by cooling to 830 to 860 DEG C and feeding in phosphorous carrying nitrogen, dry oxygen and big nitrogen; and (4) completing the diffusion and cooling for delivery. As proven by the experiment, compared with the existing phosphorus diffusion technology, the open circuit voltage of the cell prepared through the phosphorus diffusion method is remarkably improved for about 7mV, and the fill factors of the cell can be improved for 0.9, therefore the component consumption is reduced for 0.97%, and the unexpected technical effect is achieved.

Description

technical field [0001] The invention relates to a phosphorous diffusion method of a crystalline silicon chip, which can be used to prepare a solar cell and belongs to the field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, crystalline silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. , has excellent electrical and mechanical properties. Therefore, crystalline silicon solar cells occupy an important position in the field of photovoltaics. [0003] At present, the conventional production process of crystalline silicon solar cells is to start from crystalline silicon wafers and carry out texturing, diffusion, etching ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/18C30B31/08
Inventor 党继东贾洁静辛国军徐义胜王永伟费正洪孟祥熙王栩生章灵军
Owner YANCHENG CANADIAN SOLAR INC