The invention discloses a shield grid groove type
MOSFET process method, comprising: a first step, with
silicon nitride and
silicon oxide as a
hard mask,
etching a substrate to form a groove; a second step, depositing a layer of
silicon oxide on the side wall and the bottom of the groove; a third step, filling polysilicon in the groove and
etching back; a fourth step,
etching back the polysilicon, and removing the
silicon oxide on the side wall of the groove; a fifth step, depositing a layer of
silicon nitride to cover the inner side wall of the groove and the polysilicon; a sixth step, etching the
silicon nitride above the polysilicon to
expose the polysilicon; a seventh step, depositing
silicon oxide above the polysilicon; an eighth step, removing the
silicon nitride on the entire device; a ninth step, depositing
silicon oxide, depositing polysilicon and etching back to form a groove polysilicon grid; and a tenth step, forming a
body region, injecting a source region, and depositing interlevel
dielectric to form
contact hole fabrication
metal process. The process disclosed by the invention is used for realizing single control of
oxide films
and gate oxide between the polysilicon, and solving the problem of relatively
high current leakage of the grid of the device.