Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell

A copper-zinc-tin-sulfur-selenium and thin-film technology, which is applied in circuits, electrical components, and final product manufacturing, etc., can solve the problems of low collection efficiency, short lifespan of photogenerated carriers, and low photoelectric conversion efficiency.

Active Publication Date: 2012-11-07
SHENZHEN INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Traditional copper-zinc-tin-sulfur-selenium thin-film solar cells have short lifespan and low collection efficiency of photogenerated carriers...

Method used

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  • Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell
  • Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell
  • Copper-zinc-tin-sulfide-selenium film and preparation method thereof as well as copper-zinc-tin-sulfide-selenium film solar cell

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Embodiment Construction

[0039] In order to solve the problem that the diffusion length of carriers in copper-zinc-tin-sulfur-selenide materials is too small, and the charges generated deep in the material cannot be effectively collected, resulting in low photoelectric conversion efficiency, a copper-zinc material with high photoelectric conversion efficiency was proposed. Tin-sulfur-selenium thin film and copper-zinc-tin-sulfur-selenium thin-film solar cell.

[0040] see figure 1 , the copper zinc tin sulfur selenium thin film solar cell 10 of this embodiment includes a substrate 100 , a back electrode layer 200 , a light absorbing layer 300 , a buffer layer 400 , a window layer 500 , a transparent electrode layer 600 and a metal gate layer 700 . Wherein, the light absorbing layer 300 is a copper zinc tin sulfur selenide thin film. When light energy is converted into electric energy, the light is transmitted from the buffer layer 400 and enters the copper zinc tin sulfur selenide film 300, and the c...

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Abstract

The invention provides a copper-zinc-tin-sulfide-selenium (CZTSSe) film, which comprises a light-incident surface and a backlight surface opposite to the light-incident surface. The molar ratio of sulfide to selenium in the CZTSSe film is increased gradually along with the direction from the light-incident surface to the backlight surface. The forbidden bandwidth of the CZTSSe film is changed along with the changes of the molar ratio of the sulfide to the selenium in a material. The forbidden bandwidth can cause the generation of potential difference between the light-incident surface and the backlight surface, and photo-induced carriers are driven out of a high recombination area; therefore, recombination among the photo-induced carriers is avoided, and the service liives of the photo-induced carriers are prolonged. The generated potential difference is beneficial to improving the diffusion length of the photo-induced carriers and the collection efficiency of the photo-induced carriers is improved, thus improving the photoelectric conversion efficiency of the cell. The invention further provides a preparation method of the CZTSSe film and a CZTSSe film solar cell.

Description

technical field [0001] The invention relates to photovoltaic technology, in particular to a copper-zinc-tin-sulfur-selenide film, a method for preparing the copper-zinc-tin-sulfur-selenium film and a copper-zinc-tin-sulfur-selenide film solar cell. Background technique [0002] Thin-film solar cells are low in cost and light in weight, can be fabricated into devices on a variety of cheap substrates, and are convenient for mass production, which is an important direction for the development of solar cells in the future. Copper-zinc-tin-sulfur-selenide (CZTSSe) thin-film solar cells can take into account high efficiency and low cost at the same time. Because the earth reserves of copper, zinc, tin, sulfur and selenium in its alloy materials are very rich and do not contain toxic components, it also overcomes the The resource bottleneck of thin-film solar photovoltaic materials has been overcome, and copper-zinc-tin-sulfur-selenide thin-film solar cells have the ability of sust...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18C23C14/06C23C14/58
CPCY02P70/50
Inventor 罗海林肖旭东杨春雷刘壮顾光一冯叶程冠铭
Owner SHENZHEN INST OF ADVANCED TECH
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