Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof

Abstract

The invention relates to a silicon wafer fine polishing combined solution capable of inhibiting particle deposition and a preparation method thereof, belonging to the field of CMP (chemical mechanical polishing). The silicon wafer fine polishing combined solution capable of inhibiting particle deposition is prepared by using silicon dioxide/water-soluble polymer composite abrasive particles, hydroxyl-containing and/or amino-containing surface protecting agent, alkali compound, surfactant and deionized water. The pH (potential of hydrogen) of the silicon wafer fine polishing combined solution is 8-12. Compared with the prior art, the deposition of particles is effectively inhibited, and the precision and the quality of polished silicon wafer surfaces are improved. The silicon wafer fine polishing combined solution provided by the invention has the advantages that the used raw materials are easy to obtain, the silicon wafer fine polishing combined solution is pollution free, the requirements on environmental protection are satisfied and the large-scale industrial production is easy to realize.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing (CMP), in particular to a silicon wafer fine polishing combination liquid capable of inhibiting particle deposition. Background technique [0002] Silicon wafers are the main substrates of integrated circuits (ICs). With the continuous improvement of integrated circuit integration and the continuous reduction of feature sizes, the requirements for processing accuracy and surface quality of silicon wafers are getting higher and higher. At present, the use of chemical mechanical polishing (CMP) technology to planarize the surface of silicon wafers has become one of the essential process steps for integrated circuit manufacturing technology to enter the technology era after deep submicron. Patented technology, such as EP0371147B1, US5352277, CN101671528A, CN102061131A. [0003] The traditional CMP system consists of the following three parts: a rotating silicon wafer holding device, a wo...

AI Technical Summary

Problems solved by technology

At present, most of the sub-micron and nano-particles remaining on the surface of the silicon wafer can be removed through a good cleaning process, but there are still some "stubborn" particles formed during the polishing process (generally particles or particle clusters smaller than 500nm) cannot be completely removed by washing

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