Manufacturing method of charge trapping non-volatile memory

Abstract

The invention discloses a manufacturing method of a charge trapping non-volatile memory. The method comprises the following steps of: forming an active region and a channel region of a device on a semiconductor substrate through shallow-trench isolation; forming a multi-stack gate medium layer comprising a tunneling layer, a charge storage layer and a barrier layer on the substrate by combining the low-temperature chemical vapor deposition and atomic layer deposition technology, and forming a pattern through photoetching; forming a side wall and a mask layer of the gate medium layer by a low-temperature chemical vapor deposition and photoetching method; forming a source / drain region and an expansion region thereof through ion implantation, and activating by laser; forming a gate electrode on the gate medium layer, and depositing a polycrystalline silicon medium at the upper layer of the gate electrode to form a multi-gate electrode layer; executing the isolation and encapsulation operations of the gate structure by a low-temperature chemical vapor deposition method; and leading out the gate, source and drain electrodes through metal interconnection. Through the invention, the heat budget in the memory manufacturing process can be reduced, and the crystallization problem of the thin-film medium layer of a high-dielectric constant material is inhibited.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for manufacturing a charge-trapping non-volatile memory. Background technique [0002] The current microelectronics products are mainly divided into two categories: logic devices and storage devices, and storage devices are needed in almost all electronic products today, so storage devices occupy a very important position in the field of microelectronics. [0003] Storage devices can generally be classified into volatile memories and non-volatile memories. The main feature of non-volatile memory is the ability to retain stored information for a long period of time without power on. It not only has the characteristics of read-only memory (ROM), but also has high access speed, and is easy to erase and rewrite, and consumes less power. With the demand for large-capacity and low-power storage in multimedia applications and mobile communications, the market share o...

AI Technical Summary

Problems solved by technology

However, high dielectric constant semiconductor materials generally crystallize at high temperatures, thereby increasing the leakage rate of the memory and deteriorating the performance of the memory.

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