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Method for manufacturing distributed feedback laser device array by virtue of selection region epitaxy technology

A technology of selective area epitaxy and laser arrays, applied in lasers, laser devices, semiconductor lasers, etc., and can solve problems such as deviation from peak gain, change of quantum well emission wavelength, and change of effective refractive index.

Active Publication Date: 2012-12-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantage of this scheme is that while the effective refractive index of the material changes with the thickness, the emission wavelength of the quantum well also changes with the thickness of the material.
Since the emission wavelength of the quantum well material is very sensitive to the thickness of the quantum well, as the thickness of the material changes, the change speed of the quantum well emission wavelength is much faster than the change speed of the Bragg wavelength of the distributed feedback laser, which will cause the Bragg wavelength of some array units to deviate from the quantum Gain peaking of the well material, leading to deterioration of its single-mode characteristics
In addition, because quantum well materials generally have a large strain, a significant increase in thickness will lead to a significant decrease in material quality

Method used

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  • Method for manufacturing distributed feedback laser device array by virtue of selection region epitaxy technology
  • Method for manufacturing distributed feedback laser device array by virtue of selection region epitaxy technology
  • Method for manufacturing distributed feedback laser device array by virtue of selection region epitaxy technology

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no. 1 example

[0031] see figure 1 , image 3 , Figure 5 and Image 6 As shown, the present invention provides a method (first embodiment) for making a distributed feedback laser array using the selective area epitaxy technique, comprising the following steps:

[0032] Step 1: Epitaxially grow the confinement layer 2 and the quantum well layer 3 respectively on the substrate 1. The substrate 1 is a GaAs substrate, InP substrate, GaN substrate, SiC substrate, Si substrate, or other III-V , II-VI group material substrate;

[0033] Step 2: making a selective area epitaxial dielectric mask pattern 4 on the quantum well layer 3 ( Figure 5 ) or 5( Image 6 ). The period of the dielectric mask pair in mask pattern 4 or 5 and the period of the array unit ( image 3 ) are the same, both are S. mask pattern 4 ( Figure 5 ) The distance between the mask pairs remains unchanged, and the mask width gradually increases, that is, the mask M 1 , M 2 , M 3 to M N The width satisfies W 1 2 3 N...

no. 2 example

[0038] see again figure 2 , Figure 4 , Figure 5 and Image 6 As shown, the present invention also provides a method (second embodiment) for making a distributed feedback laser array using the selective area epitaxy technique, comprising the following steps:

[0039] Step 1: making a selective area epitaxial dielectric mask pattern 4 on the substrate 1 ( Figure 5 ) or 5( Image 6 ). The substrate 1 is a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, a Si substrate, or other III-V, II-VI group material substrates. The period of the dielectric mask pair in mask pattern 4 or 5 and the period of the array unit ( Figure 4 ) are the same, both are S. mask pattern 4 ( Figure 5 ) The distance between the mask pairs remains unchanged, and the mask width gradually increases, that is, the mask M 1 , M 2 , M 3 to M N The width satisfies W 1 2 3 N . mask pattern 5( Image 6 ) in which the mask width remains constant and the mask pair spacing gradual...

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Abstract

The invention provides a method for manufacturing a distributed feedback laser device array by virtue of a selection region epitaxy technology. The method comprises the following steps of: respectively growing a lower respective limiting layer and a quantum well layer on a substrate by epitaxy growth; manufacturing selection region epitaxy medium mask patterns on the quantum well layer; growing an upper respective limiting layer on a selection region by epitaxy growth to ensure that different laser device units are provided with the upper respective limiting layer parts with different thicknesses; removing the medium mask pattern; manufacturing an optical grating on the upper respective limiting layer in large area; and growing a contact layer on the optical grating 7 to finish the preparation of the laser device array. The method disclosed by the invention can be used for obtaining different light-emitting wavelengths of different array units while the light-emitting performance of a quantum well material is not influenced.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a method for manufacturing a distributed feedback laser array by using a selective area epitaxy technique. Background technique [0002] Multiwavelength lasers are the core devices of modern wavelength division multiplexing (WDM) optical communication systems. Due to the advantages of compact structure, low optical and electrical connection loss, high stability and reliability, monolithically integrated multi-wavelength laser arrays have broad application prospects in WDM systems. At present, a variety of manufacturing methods for monolithic integrated multi-wavelength laser arrays have been developed, including the use of electron beam exposure technology, multi-step holographic exposure technology, sampling grating technology, and selective area epitaxy technology. [0003] Among the above technologies, the use of selective area epitaxy (SAG) technology to fabricate monol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/30H01S5/12
CPCH01S5/12H01S5/4087H01S5/2077H01S5/3407
Inventor 梁松张灿朱洪亮王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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