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32results about How to "Does not affect luminosity" patented technology

Method for manufacturing AlGaInP-LED (Light Emitting Diode) integrated micro display component with single-side electrode structure

The invention discloses a method for manufacturing an AlGaInP-LED (Light Emitting Diode) integrated micro display component with a single-side electrode structure, wherein the steps comprises: etching multiple first grooves which are mutually intersected on a device body; growing a lower electrode metal layer on the bottom part of each groove to form the lower electrode metal layer; growing an insulating medium layer above a lower electrode; corroding an area of the lower electrode metal layer outside a lower electrode diagram downward till reaching a certain depth in an N-shaped substrate layer in order to form multiple second grooves; filling opaque diaphragms into the second grooves and the upper part of a protection medium of the lower electrode; manufacturing an upper electrode above a light emitting unit; and electroforming upper and lower electrode leads. With the adoption of the method for manufacturing the LED array micro display device with the planar electrode structure disclosed by the invention, the process difficulty resulting from the manufacturing of the electrodes on the front face and the back face respectively can be prevented; since the manufactured micro display device is provided with the double bar type upper and lower electrodes of which the different faces are perpendicular to each other, the more even current distribution can be obtained; and therefore, the micro display device available for even luminance is obtained.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Two-dimensional gallium nitride film confinement template preparation method and prepared two-dimensional gallium nitride film

The invention discloses a two-dimensional gallium nitride film confinement template preparation method, and relates to the technical field of semiconductor material preparation. The method comprises the following steps of transferring liquid metal gallium to the surface of a substrate to form a metal gallium film; performing film oxidation on metal gallium to obtain a gallium oxide film on the surface of the substrate; preparing a two-dimensional boron nitride film by adopting a chemical vapor deposition method; transferring the two-dimensional boron nitride film to the top surface of the gallium oxide film, so that the gallium oxide film is coated by the two-dimensional boron nitride film to obtain a silicon wafer-gallium oxide film-two-dimensional boron nitride film compound; and putting the silicon wafer-gallium oxide film-two-dimensional boron nitride film compound into an environment containing a nitrogen source for nitriding treatment, and cooling to obtain the gallium nitride film. The method has the beneficial effects that based on the stability, the insulativity and the promotion effect on the exciton luminescence performance of boron nitride, the two-dimensional boron nitride and the substrate are taken as templates, gallium nitride is grown between the two-dimensional boron nitride and the substrate in a confinement manner, the high-energy surface of gallium nitride is passivated, and a stable two-dimensional gallium nitride structure is formed.
Owner:ANHUI ZEZHONG SAFETY TECH

Method for manufacturing AlGaInP-LED (Light Emitting Diode) integrated micro display component with single-side electrode structure

The invention discloses a method for manufacturing an AlGaInP-LED (Light Emitting Diode) integrated micro display component with a single-side electrode structure, wherein the steps comprises: etching multiple first grooves which are mutually intersected on a device body; growing a lower electrode metal layer on the bottom part of each groove to form the lower electrode metal layer; growing an insulating medium layer above a lower electrode; corroding an area of the lower electrode metal layer outside a lower electrode diagram downward till reaching a certain depth in an N-shaped substrate layer in order to form multiple second grooves; filling opaque diaphragms into the second grooves and the upper part of a protection medium of the lower electrode; manufacturing an upper electrode above a light emitting unit; and electroforming upper and lower electrode leads. With the adoption of the method for manufacturing the LED array micro display device with the planar electrode structure disclosed by the invention, the process difficulty resulting from the manufacturing of the electrodes on the front face and the back face respectively can be prevented; since the manufactured micro display device is provided with the double bar type upper and lower electrodes of which the different faces are perpendicular to each other, the more even current distribution can be obtained; and therefore, the micro display device available for even luminance is obtained.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

A kind of fluorescent powder quantum dot composite particle and its preparation method and application

ActiveCN111334280BEnsure Optical ConsistencySolve the problem of subsidence and stratificationMaterial nanotechnologyNanoopticsQuantum dotSilicon oxide
The invention belongs to the field of white light LEDs, and specifically discloses a fluorescent powder quantum dot composite particle, a preparation method and application thereof. The method comprises the following steps: preparing silicon dioxide on the surface of the fluorescent powder, thereby forming a composite structure of fluorescent powder-silicon dioxide; performing positively charged modification on the surface of the fluorescent powder-silicon dioxide to obtain positively charged fluorescent powder-2 Silicon oxide; Negatively charge the surface of quantum dots to obtain negatively charged quantum dots; Through electrostatic adsorption, the negatively charged quantum dots are adsorbed on the surface of positively charged phosphor-silicon dioxide, thereby preparing phosphor quantum dots Point composite particles. The phosphor quantum dot composite particles prepared by the method provided by the present invention keep the phosphor powder and quantum dots relatively static during the encapsulation process, ensure the optical consistency of the quantum dot white light LED, and solve the problem caused by the large difference in particle size between the phosphor powder and quantum dots caused by subsidence and stratification.
Owner:HUAZHONG UNIV OF SCI & TECH

Fluorescent powder quantum dot composite particles as well as preparation method and application thereof

ActiveCN111334280AEnsure Optical ConsistencySolve the problem of subsidence and stratificationMaterial nanotechnologyNanoopticsPhysical chemistryQuantum dot
The invention belongs to the field of white light LEDs, and particularly discloses fluorescent powder quantum dot composite particles and a preparation method and application thereof. The method comprises the following steps: preparing silicon dioxide on the surface of fluorescent powder so as to form a fluorescent powder-silicon dioxide composite structure; carrying out surface positive electricity modification on the fluorescent powder-silicon dioxide to obtain positively charged fluorescent powder-silicon dioxide; carrying out surface electronegative modification on the quantum dots to obtain electronegative quantum dots; adsorbing the negatively charged quantum dots on the surface of the positively charged fluorescent powder-silicon dioxide through an electrostatic adsorption effect, so as to prepare the fluorescent powder quantum dot composite particles. The fluorescent powder quantum dot composite particles prepared by the method provided by the invention keep the fluorescent powder and the quantum dots relatively static in the packaging process, ensure the optical consistency of the quantum dot white light LED, and solve the problem of sedimentation layering caused by greatdifference between the particle sizes of the fluorescent powder and the quantum dots.
Owner:HUAZHONG UNIV OF SCI & TECH

Organic electroluminescence panel and manufacturing method thereof

ActiveCN101771133BOvercoming the technical problem of high structural alignment accuracy requirementsDoes not affect luminositySolid-state devicesSemiconductor/solid-state device manufacturingOrganic layerEngineering
The invention relates to an organic electroluminescence panel and a manufacturing method thereof. The organic electroluminescence panel comprises a base plate, a bottom electrode, an organic layer, a top electrode and a sealing layer, wherein the bottom electrode, the organic layer, the top electrode and the sealing layer are formed on the base plate from bottom to top; the distance between the edges of the bottom electrode, the organic layer and the top electrode in at least one direction and the edge of the base plate is increased progressively, and the distance between the edges of the bottom electrode, the organic layer and the top electrode in at least the other direction and the edge of the base plate is decreased progressively; the part of the top electrode overlapped above the bottom electrode is formed in the range of the organic layer; the sealing layer is covered on the bottom electrode, the organic layer and the top electrode, and at least part of the bottom electrode is exposed out in the distance-increased direction; and at least part of the top electrode is exposed out in the distance-decreased direction. The invention adopts a technical means that each layer structure on the organic electroluminescence panel relatively offsets for a certain distance, and can reduce the requirement of alignment accuracy. Accordingly, the invention can simplify equipment and process, can reduce cost, and can increase manufacturing speed and yield.
Owner:BOE TECH GRP CO LTD

Organic electroluminescence panel and manufacturing method thereof

ActiveCN101771133AOvercoming the technical problem of high structural alignment accuracy requirementsDoes not affect luminositySolid-state devicesSemiconductor/solid-state device manufacturingOrganic layerEngineering
The invention relates to an organic electroluminescence panel and a manufacturing method thereof. The organic electroluminescence panel comprises a base plate, a bottom electrode, an organic layer, a top electrode and a sealing layer, wherein the bottom electrode, the organic layer, the top electrode and the sealing layer are formed on the base plate from bottom to top; the distance between the edges of the bottom electrode, the organic layer and the top electrode in at least one direction and the edge of the base plate is increased progressively, and the distance between the edges of the bottom electrode, the organic layer and the top electrode in at least the other direction and the edge of the base plate is decreased progressively; the part of the top electrode overlapped above the bottom electrode is formed in the range of the organic layer; the sealing layer is covered on the bottom electrode, the organic layer and the top electrode, and at least part of the bottom electrode is exposed out in the distance-increased direction; and at least part of the top electrode is exposed out in the distance-decreased direction. The invention adopts a technical means that each layer structure on the organic electroluminescence panel relatively offsets for a certain distance, and can reduce the requirement of alignment accuracy. Accordingly, the invention can simplify equipment and process, can reduce cost, and can increase manufacturing speed and yield.
Owner:BOE TECH GRP CO LTD
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