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Light-emitting diode and its preparation method

A technology of light-emitting diodes and light-emitting layers, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of unbalanced electron transfer rate and hole transfer rate, etc., to increase the plasmon resonance effect, improve efficiency, Effect of increasing luminous efficiency and luminous intensity

Active Publication Date: 2022-06-03
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a light-emitting diode, aiming to solve the problem of unbalanced electron transfer rate and hole transfer rate in existing light-emitting diodes

Method used

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  • Light-emitting diode and its preparation method
  • Light-emitting diode and its preparation method
  • Light-emitting diode and its preparation method

Examples

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Embodiment approach

[0034] As an embodiment, the particle size of the noble metal nanoparticles is 30-50 nanometers.

[0035]In the embodiment of the present invention, the precious metal nanoparticles can be selected from commercially available commodities, and can also be selected from products prepared by conventional technical means in the art.

[0036] In some embodiments, the precious metal nanoparticles are gold nanoparticles, and the preparation method includes:

[0037] (1) In the glassware after washing, rinsing and drying with aqua regia, first add 100 mL of pure water, and then add 1 mL of 0.5 mmol / mL trisodium citrate solution;

[0038] (2) 20mL, 0.0025mmol / mL HAuCl 4 and 10mL, 0.01mmol / ml CTAB (hexadecyltrimethylammonium bromide) mixed solution was rapidly injected into the trisodium citrate solution, vigorously stirred for 1min, and stood still at room temperature for 1h to obtain a precious metal seed solution;

[0039] (3) adding 5mL, 0.01mmol / ml CTAB, 5.5mL, 0.01mmol / ml chloro...

Embodiment 1

[0070] In this example, a light-emitting diode is prepared, which includes an ITO bottom electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, a transition layer, an electron transport layer and a cathode that are stacked in sequence.

[0071] The method for preparing the above light-emitting diode specifically includes the following steps:

[0072] 1. Preparation of transition layer material

[0073](1) In the glassware after washing, rinsing and drying with aqua regia, first add 100 mL of pure water, and then add 1 mL of 0.5 mmol / mL trisodium citrate solution;

[0074] (2) 20mL, 0.0025mmol / mL HAuCl 4 and 10mL, 0.01mmol / ml CTAB (hexadecyltrimethylammonium bromide) mixed solution was rapidly injected into the trisodium citrate solution, vigorously stirred for 1min, and stood still at room temperature for 1h to obtain a precious metal seed solution;

[0075] (3) adding 5mL, 0.01mmol / ml CTAB, 5.5mL, 0.01mmol / ml chloroauric acid, 3mL, 0....

Embodiment 2

[0086] In this example, a light-emitting diode is prepared, which is different from Example 1 in that the thickness of the hole injection layer is 25 nanometers; the thickness of the cathode is 10 nanometers.

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Abstract

The invention belongs to the field of display technology, in particular to a light emitting diode and a preparation method thereof. The light-emitting diode provided by the present invention includes: an anode, a cathode, a light-emitting layer arranged between the anode and the cathode, a transition layer arranged between the cathode and the light-emitting layer, and the materials of the transition layer include: noble metal nanoparticles and metal organic framework materials, Metal-organic framework materials have a pore structure, and noble metal nanoparticles are loaded in the pore structure. The problem of unbalanced electron transport rate and hole transport rate existing in the existing light-emitting diode is solved, and the light-emitting performance of the light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a light emitting diode and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) is a new type of display device that uses quantum dots as light-emitting layer materials and is applied to organic or polymer electroluminescent devices. Electrons and holes are injected into the light-emitting layer and passed through. Radiation composite luminescence has the advantages of low cost, light weight, fast response speed and high color saturation, and has broad development prospects, and has become one of the important research directions of a new generation of LED display devices. [0003] However, in the current quantum dot light-emitting diodes, the electron transport rate is often greater than the hole transport rate, which leads to unstable recombination of electrons and holes in the light-emitting layer, and even causes exc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/00H10K50/115H10K50/16H10K71/00
Inventor 夏思雨杨一行
Owner TCL CORPORATION
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