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Two-dimensional gallium nitride film confinement template preparation method and prepared two-dimensional gallium nitride film

A technology of gallium nitride film and boron nitride film, which is applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problem that gallium nitride is not a two-dimensional material, and achieve the reduction of spectral broadening and optimization Electrical and optical intrinsic properties, the effect of lowering the energy barrier

Active Publication Date: 2021-10-26
ANHUI ZEZHONG SAFETY TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The patent with the publication number CN103741221A discloses a method for growing high-quality gallium nitride crystals using hexagonal boron nitride nanosheets, using hydride vapor phase epitaxy (HVPE) to directly grow GaN single crystals on a substrate partially covered with two-dimensional materials, but the The patent is to use hexagonal boron nitride nanosheets to grow high-quality gallium nitride crystals, using two-dimensional boron nitride as the epitaxial substrate to improve the quality of the obtained GaN film, but the thickness of the obtained gallium nitride is not a two-dimensional material

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  • Two-dimensional gallium nitride film confinement template preparation method and prepared two-dimensional gallium nitride film
  • Two-dimensional gallium nitride film confinement template preparation method and prepared two-dimensional gallium nitride film
  • Two-dimensional gallium nitride film confinement template preparation method and prepared two-dimensional gallium nitride film

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Embodiment 1

[0042] A method for preparing a confined template of a two-dimensional gallium nitride film, specifically comprising the following steps:

[0043] Heating to 40°C to melt gallium metal to obtain liquid gallium metal, using the heat release film to absorb liquid gallium metal, pressing the liquid metal gallium on the silicon wafer to obtain a gallium metal film, putting the gallium metal film into a quartz tube and heating to 450°C, The gallium oxide film is obtained by accelerating the reaction process of gallium. At room temperature, liquid metal gallium and air form a self-limiting oxide layer, but since peeling off the self-limiting oxide layer directly will cause defects such as wrinkles, which will further affect the properties of gallium nitride, so the choice of adsorbing gallium liquid to prepare metal gallium thin films is Gallium reacts slowly with air, so it can be heated appropriately to accelerate the reaction, so that the metal gallium film can be quickly oxidize...

Embodiment 2

[0047] A method for preparing a confined template of a two-dimensional gallium nitride film, specifically comprising the following steps:

[0048] Heating to 40°C to melt gallium metal to obtain liquid gallium metal, use heat release film to absorb liquid gallium metal, press liquid gallium metal on the quartz plate to obtain gallium metal film, put the gallium metal film into the quartz tube and heat to 500°C, accelerate The gallium reaction process results in a gallium oxide film. At room temperature, liquid metal gallium and air form a self-limiting oxide layer, but since peeling off the self-limiting oxide layer directly will cause defects such as wrinkles, which will further affect the properties of gallium nitride, so the choice of adsorbing gallium liquid to prepare metal gallium thin films is Gallium reacts slowly with air, so it can be heated appropriately to accelerate the reaction, so that the metal gallium film can be quickly oxidized into a gallium oxide film.

...

Embodiment 3

[0052] A method for preparing a confined template of a two-dimensional gallium nitride film, specifically comprising the following steps:

[0053] Heating to 40°C to melt metal gallium to obtain liquid metal gallium, use heat release film to absorb liquid metal gallium, press liquid metal gallium on the mica substrate to obtain metal gallium film, put the metal gallium film into a quartz tube and heat to 550 ℃, accelerate the reaction process of gallium to obtain gallium oxide film. At room temperature, liquid metal gallium and air form a self-limiting oxide layer, but since peeling off the self-limiting oxide layer directly will cause defects such as wrinkles, which will further affect the properties of gallium nitride, so the choice of adsorbing gallium liquid to prepare metal gallium thin films is Gallium reacts slowly with air, so it can be heated appropriately to accelerate the reaction, so that the metal gallium film can be quickly oxidized into a gallium oxide film.

...

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Abstract

The invention discloses a two-dimensional gallium nitride film confinement template preparation method, and relates to the technical field of semiconductor material preparation. The method comprises the following steps of transferring liquid metal gallium to the surface of a substrate to form a metal gallium film; performing film oxidation on metal gallium to obtain a gallium oxide film on the surface of the substrate; preparing a two-dimensional boron nitride film by adopting a chemical vapor deposition method; transferring the two-dimensional boron nitride film to the top surface of the gallium oxide film, so that the gallium oxide film is coated by the two-dimensional boron nitride film to obtain a silicon wafer-gallium oxide film-two-dimensional boron nitride film compound; and putting the silicon wafer-gallium oxide film-two-dimensional boron nitride film compound into an environment containing a nitrogen source for nitriding treatment, and cooling to obtain the gallium nitride film. The method has the beneficial effects that based on the stability, the insulativity and the promotion effect on the exciton luminescence performance of boron nitride, the two-dimensional boron nitride and the substrate are taken as templates, gallium nitride is grown between the two-dimensional boron nitride and the substrate in a confinement manner, the high-energy surface of gallium nitride is passivated, and a stable two-dimensional gallium nitride structure is formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing a confinement template of a two-dimensional gallium nitride film and the obtained two-dimensional gallium nitride film. Background technique [0002] Gallium nitride (GaN) is an important broadband semiconductor for building high-power, high-speed optoelectronic components. However, its exciton binding energy is low, and electron-hole separation is easy, which limits the luminous efficiency. The exciton binding energy of gallium nitride can be increased by making the material two-dimensional and using the quantum confinement effect. For solids with a layered structure, the layers are bonded by van der Waals. The two-dimensionalization of van der Waals materials only needs to overcome small van der Waals forces, which can be obtained by tape stripping or ion intercalation. For materials whose bulk phase is a non-layered structur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/01C23C26/02C23C8/12
CPCC23C16/342C23C16/01C23C26/02C23C8/12C23C16/303Y02P70/50
Inventor 于欣欣张起瑞吴长征周扬王大军杨广
Owner ANHUI ZEZHONG SAFETY TECH
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