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Preparation method of acetone steam gas-sensitive sensing element based on zinc oxide film

A zinc oxide film, acetone vapor technology, applied in vacuum evaporation plating, ion implantation plating, coating and other directions, can solve the problem of not being able to detect the presence or absence of acetone and its concentration, etc.

Inactive Publication Date: 2012-12-19
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the technical information published on its website in October 2005, the gas sensor is prepared by chemical film-forming method. It is a thin-film gas sensor based on tin oxide and is very sensitive to alcohol and other organic solvents. Detect the presence or absence and concentration of acetone in organic vapors

Method used

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  • Preparation method of acetone steam gas-sensitive sensing element based on zinc oxide film
  • Preparation method of acetone steam gas-sensitive sensing element based on zinc oxide film
  • Preparation method of acetone steam gas-sensitive sensing element based on zinc oxide film

Examples

Experimental program
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Effect test

Embodiment 1

[0020] RF sputtering ZnO film

[0021] The Zn0 film is deposited on the outer surface of the ceramic tube by radio frequency magnetron sputtering. Before the experiment, clean the ceramic tube with alcohol. The target material of RF magnetron sputtering is Zn0, and the distance between the target and the substrate is about 40mm. During the reactive deposition process, argon (Ar) is used as sputtering gas, oxygen (0 2 ) Is the reaction gas.

[0022] The Zn0 film was prepared on the FJL560 ultra-high vacuum magnetron sputtering apparatus. The Zn0 film prepared on RF magnetron sputtering equipment and the test process are as follows:

[0023] (1) Put a Zn target with a purity of 99.99% on the DC sputtering target, install the cleaned ceramic tube on the instrument slide, and close the vacuum chamber;

[0024] (2) Pump the system to vacuum before sputtering. The process is as follows: start the mechanical pump, and the mechanical pump pumps the magnetron sputtering chamber. When the po...

Embodiment 2

[0034] (1) Put a Zn target with a purity of 99.99% on the DC sputtering target, put the cleaned ceramic tube on the sample holder, and close the vacuum chamber;

[0035] (2) Pump the system to vacuum before sputtering. The process is as follows: start the mechanical pump, and the mechanical pump pumps the magnetron sputtering chamber. When the pointer of the vacuum gauge reaches 1-30Pa, start the molecular pump and use the molecular pump to Control the sputtering chamber to vacuum until the system pressure reaches 1×10 -3 5pa;

[0036] (3) After vacuuming, open the gas circuit valves of oxygen and argon, and pass these two gases into the system. 2 : Ar=1:2, make the pressure in the system reach 0.5pa;

[0037] (4) After the gas is introduced, heat the ceramic tube slide to a temperature of 250°C;

[0038] (5) Finally start sputtering: the voltage between the Zn target and the slide is 400V, and the sputtering current is 0.3A. At first, it needs to pre-sputter for about 8 minutes, and...

Embodiment 3

[0041] (1) Put a Zn target with a purity of 99.99% on the DC sputtering target, and remove the cleaned Al 2 O 3 Place the ceramic tube on the sample holder and close the vacuum chamber;

[0042] (2) Pump the system to vacuum before sputtering. The process is as follows: start the mechanical pump, and the mechanical pump pumps the magnetron sputtering chamber. When the pointer of the vacuum gauge reaches 1-30Pa, start the molecular pump and use the molecular pump to Control the sputtering chamber to vacuum until the system pressure reaches 5×10 -3 pa;

[0043] (3) After vacuuming, open the gas circuit valves of oxygen and argon, and pass these two gases into the system. 2 : Ar=1:2, make the pressure in the system reach 0.8pa;

[0044] (4) After the gas is introduced, heat the ceramic tube slide to a temperature of 250°C;

[0045] (5) Finally start sputtering: the voltage between the Zn target and the slide is 350V, and the sputtering current is 0.2A. At first, it needs to pre-sputter ...

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Abstract

The invention discloses a preparation method of an acetone steam gas-sensitive sensing element based on a zinc oxide film. The method is performed on ultrahigh-vacuum multifunctional radiofrequency magnetron sputtering equipment, and comprises the following steps of: before sputtering, vacuumizing a system till the air pressure of the system reaches 3*10<-3>Pa; opening gas path valves of oxygen and argon, introducing the two types of gases into the system, and heating ceramic tube slide glass till the temperature is up to 250 DEG C; and pre-sputtering for 8-12 minutes under the condition that the voltage between a Zn target and the slide glass is 300-400V and the sputtering current is 0.1-0.3A, sputtering for 20 minutes, lowering the temperature of the system to the room temperature, introducing nitrogen into a vacuum chamber till the air pressure is up to 105PA, opening the vacuum chamber, and taking a sample out. The gas-sensitive element is prepared by adopting a sputtering method, the prepared gas-sensitive element is only sensitive to acetone steam, and the presence and concentration of acetone steam can be detected in mixed organic steam.

Description

Technical field [0001] The invention belongs to a method for preparing a gas sensor element, and particularly relates to a method for preparing a selective zinc oxide (ZnO) film type acetone vapor gas sensor element. Background technique [0002] The gas sensor is the core component of the gas sensor, and its quality level determines the quality of the gas sensor. At present, there are broad-spectrum gas sensing elements that are sensitive to organic gases on the market, but none of them are sensitive to acetone. For example, the TGS822 gas sensor element produced by Tianjin Figaro Electronics Co., Ltd. According to the technical information published on its website in October 2005, the gas sensor is prepared by a chemical film forming method. It is a tin oxide-based thin film gas sensor and is very sensitive to alcohol and other organic solvents. The presence or absence of acetone and its concentration were detected in the organic vapor. Summary of the invention [0003] The t...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08G01N27/12
Inventor 何平陈翠欣杨帆张炳强潘国峰
Owner HEBEI UNIV OF TECH
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