Packaging method of high frequency internal matching power device

A technology of power devices and packaging methods, which is applied in the manufacture of semiconductor devices, electric solid devices, semiconductor/solid devices, etc., and can solve the problem of high Q value of the input matching circuit of internal matching devices, reducing the input VSWR of internal matching devices, and internal matching Problems such as the influence of device output power, to achieve the effect of improving input standing wave ratio, flexible adjustability, and improving input and output impedance

Active Publication Date: 2012-12-19
昆山工研院第三代半导体研究院有限公司
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is relatively simple, it will make the Q value of the input matching circuit of the internal matching device higher, thereby reducing the input VSWR of the internal matching device, reducing the bandwidth, and reducing the gain, so that the output power of the internal matching device is also reduced. affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging method of high frequency internal matching power device
  • Packaging method of high frequency internal matching power device
  • Packaging method of high frequency internal matching power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 2 As shown, the upper and lower electrodes are input electrodes 201 and output electrodes 202 respectively, which are respectively used to connect the input and output internal matching circuits for constituting the internal matching circuit. The backside has an electroplated backgold for soldering power devices to the case with AuSn solder. The power device is an AlGaN / GaN HEMTs microwave power device based on a SiC substrate with a total gate width of 6 mm.

[0049] Such as image 3 As shown, the traditional single-stage LCL internal matching circuit is composed of an input internal matching ceramic circuit 303 and an output internal matching ceramic circuit 304. The input matching of this device adopts a single-stage single-stage circuit consisting of an input matching ceramic capacitor 305 and a gold wire 306 connected in parallel to ground. The LCL network increases the input impedance of the power device, and then the 6mm high-frequency power dev...

Embodiment 2

[0056] The only difference between this embodiment and Embodiment 1 is that the input and output matching capacitors are composed of two input matching chip capacitors and one output matching chip capacitor. Other places are completely consistent with Embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a packaging method of a high frequency internal matching power device. The packaging method comprises the following steps: co-crystallizing an internal matching circuit inside a tube shell through a gold and germanium alloy; co-crystallizing a power device and an input/output matching capacitor inside the tube shell through a gold and tin alloy; mutually connecting the power device, the input/output matching capacitor and the internal matching circuit through gold wires electrically; and connecting the internal matching circuit with tube shell pins through gold strips electrically. According to the packaging method of the high frequency internal matching power device, provided by the invention, a packaging mode of two-stage LCL (lower control limit) input matching is adopted, a Q value of an input matching circuit is reduced, and so that the bandwidth, the gain and the output power of the internal matching power device are increased; in addition, by co-crystallizing the high frequency power device, the ceramic capacitor and the matching circuit inside the tube shell by adopting the gold-tin and gold-germanium, the solidity of the physical connection is guaranteed, and the thermal conductivity of the power device is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and hybrid microwave integrated circuits, in particular to a packaging method for high-frequency internal matching power devices. Background technique [0002] In the development of high-frequency internal matching power devices, the input matching circuit is an important and difficult point. Its importance lies in that the quality of the input matching will directly affect the performance of the internal matching device's input standing wave, bandwidth, gain and output power; The difficulty lies in high-frequency internal matching devices, especially for large-sized devices, whose input impedance is very small, generally around 1 ohm, and the characteristic impedance of the system is generally 50 ohms. Such a large impedance conversion ratio greatly increases the input matching. Difficulty in circuit design. In addition, the performance of the high-frequency internal matching devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/50
CPCH01L2924/3011H01L2224/45144H01L2224/48091H01L2224/49175H01L2924/30107
Inventor 罗卫军陈晓娟杨成樾刘新宇
Owner 昆山工研院第三代半导体研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap