Wafer level LED packaging structure

Abstract

The invention relates to a wafer level LED packaging structure which comprises the technical field of semiconductor chip packaging and comprises an LED chip (1), a silicon base carrier (2), glass (3), a filling glue (4), a reflection layer (5), a photosensitive resin layer (6) and a metal layer, wherein a concave cavity (21) concaved in the right side of the silicon base carrier (2) is internally provided with an LED chip (1), a silicon island (22) is formed on the back surface of the silicon base carrier and is stridden with the cavity (21), a photosensitive resin layer I (61) with an island structure is covered on the lower surface of the silicon base carrier (2), a metal block (72) is arranged on the lower surface of the silicon island (22), a rewiring metal layer (71) is connected with an electrode I ( 121) and an electrode II (122), and a signal and heat of the LED chip are led outside. Due to the adoption of a non-TSV (Through Silicon Via) structure, the wafer level LED packaging structure has the advantages of low packaging process difficulty and low packaging cost, is improved in electricity conduction and heat radiating capacity, and is suitable for being widely applied in portable products.

Description

technical field [0001] The invention relates to a wafer-level chip packaging structure, which belongs to the technical field of semiconductor chip packaging. Background technique [0002] LED (Light Emitting Diode) is a solid-state semiconductor device that can convert electrical energy into visible light. It is widely used in lighting, liquid crystal backlight panels, control panels, flash devices and other fields. [0003] LEDs (Light Emitting Diodes) consist of P-N junctions. At present, LED packaging is mainly carried out by bonding a single chip (that is, wire bonding) and flip-chip bonding, which has the following shortcomings: [0004] 1) Wire-bonded package [0005] The position of the lead will cover and lose the light intensity. The heat dissipation base of the wire-bonding package is on the back of the chip, and the heat dissipation effect is not ideal. Especially for high-brightness LEDs, the package size of the wire-bonding package is relatively large. Not co...

AI Technical Summary

Problems solved by technology

[0007] With the deepening of people's understanding of wire bonding LED packaging, the LED packaging technology with wafer as the carrier has begun to develop, but in the current technological development, Wafer-level LED packaging basically adopts the Through Silicon Via (TSV) interconnection method, and uses the TSV (Through Silicon Via) structure to realize the backside transfer and distribution of LED electrodes. The process is difficult, the packaging cost is high, and the effective area for heat dissipation Bound

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