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Red-type light emitting phosphor, method for producing same and light emitting device using red-type light emitting phosphor

A technology of light-emitting devices and phosphors, applied in the direction of light-emitting materials, chemical instruments and methods, semiconductor devices, etc., can solve problems such as no specific description, and achieve the effect of improving life characteristics

Inactive Publication Date: 2013-01-02
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no specific description of the removal effect of glass equivalent by acid treatment.

Method used

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  • Red-type light emitting phosphor, method for producing same and light emitting device using red-type light emitting phosphor
  • Red-type light emitting phosphor, method for producing same and light emitting device using red-type light emitting phosphor
  • Red-type light emitting phosphor, method for producing same and light emitting device using red-type light emitting phosphor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] (Example 1, Comparative Example 1)

[0082] Example 1: Activation of a nitride red light-emitting phosphor (Ca 0.99 Eu 0.01 )AlSiN 3 10g, add pure water 100g, 96% concentrated sulfuric acid (H 2 SO 4 ) 1 g and 46% hydrofluoric acid (HF) 1 g, the temperature was adjusted to 50° C., and stirred for 20 minutes. Thereafter, the red light-emitting phosphor was allowed to settle, and the supernatant was removed. This operation was repeated 3 times. Then, 100 g of pure water was added to the red light-emitting phosphor, the temperature was adjusted to 80° C., and the mixture was stirred for 20 minutes. Thereafter, the red light-emitting phosphor was allowed to settle, and the supernatant was removed. This operation was repeated 10 times. Finally, the red light-emitting phosphor was allowed to settle, and the conductivity of the supernatant was measured at room temperature, and it was 10 μs / cm.

[0083] The divalent europium-activated nitride red light-emitting phospho...

Embodiment 2～6、 comparative example 2～6

[0091] For the divalent europium-activated nitride red light-emitting phosphor, samples having various compositions and electrical conductivity were evaluated in the same manner as in Example 1, and the results are shown in Table 2.

[0092] [Table 2]

[0093]

[0094] As can be clearly seen from Table 2, compared with Comparative Examples 2 to 6, the red-based light-emitting phosphors of Examples 2 to 6 have excellent initial luminance, and the luminance after 2000 hours is also good, and the life characteristics are greatly improved. improve.

[0095]

Embodiment 7

[0096] (Example 7, Comparative Example 7)

[0097] Example 7: A gallium nitride (GaN)-based semiconductor having a peak wavelength at 450 nm was used as a light-emitting element. In the wavelength conversion part, a divalent europium-activated nitride phosphor having an electrical conductivity of 20 μs / cm of the supernatant of a solution containing 10 parts by mass of pure water to 1 part by mass of the phosphor was used as a red light emitting phosphor (Ca 0.99 Eu 0.01 )AlSiN 3 , as a green-based light-emitting phosphor, Eu 0.05 Si 11.55 Al 0.45 o 0.35 N 15.65 A green-based light-emitting phosphor with a composition of (β-type SIALON). These red-based light-emitting phosphors and green-based light-emitting phosphors were mixed at a mass ratio of 1:2.7, and the obtained materials were dispersed in a heat-curable silicone resin sealing material as a medium, and the light-emitting element was sealed. The wavelength conversion part was produced, and the light-emitting de...

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Abstract

Disclosed is a divalent europium-activated nitride red-type light emitting phosphor substantially represented by general formula (1): (MI1-xEux)MIISiN3... (1). (In formula (1), MI is a alkaline earth metal element and indicates at least one element selected from a group formed from Mg, Ca, Sr, and Ba; MII is a trivalent metal element and indicates at least one element selected from a group formed from Al, Ga, In, Sc, Y, La, Gd, and Lu; and x is a number that satisfies 0.001 =< x <= 0.10.) The divalent europium-activated nitride red-type light emitting phosphor is characterized by having electric conductivity of 10 ms / cm or less in a supernatant fluid of a solution containing 10 parts by mass pure water per 1 part by mass of the red-type light emitting phosphor.

Description

technical field [0001] The present invention relates to a phosphor suitable for use as a light-emitting device and a light-emitting device using the same in a wavelength conversion part, particularly a light-emitting device with stable characteristics. Background technique [0002] A light-emitting device combining a semiconductor light-emitting element and a phosphor is attracting attention as a next-generation light-emitting device that is expected to achieve low power consumption, small size, high luminance, wide-range color reproducibility, and high color rendering, and is being actively developed. Research and Development. The primary light emitted from the light-emitting element generally uses a range from long-wavelength ultraviolet light to blue light, that is, light with a wavelength of 380 to 480 nm. In addition, wavelength conversion parts using various phosphors suitable for this purpose have also been proposed. [0003] At present, as such a white light-emitti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/64C09K11/59C09K11/62C09K11/79C09K11/80H01L33/50
CPCH01L33/502C09K11/0883C09K11/7734H01L2924/181H01L2224/48091H01L2224/48247H01L2224/48257H01L2224/73265C09K11/77342C09K11/77348H01L2924/00014H01L2924/00012
Inventor 原田昌道植村丰德福永浩史松下仁士寺岛贤二
Owner SHARP KK
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