Method for optimizing crystalline silicon solar cell diffusion square resistance uniformity

A technology of solar cells and square resistors, applied in circuits, electrical components, climate sustainability, etc., can solve problems such as cost increases, and achieve the effects of increasing production costs, reducing leakage current, and improving uniformity

Inactive Publication Date: 2013-01-09
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Problems solved by technology

Increasing the nitrogen flow rate will help to improve the uniformity but will greatly increase th

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  • Method for optimizing crystalline silicon solar cell diffusion square resistance uniformity
  • Method for optimizing crystalline silicon solar cell diffusion square resistance uniformity
  • Method for optimizing crystalline silicon solar cell diffusion square resistance uniformity

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Embodiment Construction

[0015] Below in conjunction with example and accompanying drawing, the present invention is described in further detail.

[0016] The purpose of the present invention is to improve the uniformity of diffusion sheet resistance through this process, so that the distribution of sheet resistance is more uniform and reasonable. After adding the oxide layer, the uniformity of the sheet resistance and the parallel resistance are improved, thereby improving the photoelectric conversion efficiency of the solar cell to a certain extent.

[0017] The present invention comprises following four steps:

[0018] (1) Put the silicon wafer into the diffusion furnace, and make a layer of SiO on the surface of the silicon wafer 2 For the oxide layer, the temperature is controlled at 850°C~870°C, and then 1800ml / min of dry oxygen (oxygen) and 24000ml / min of large nitrogen (nitrogen) are introduced for 150s.

[0019] (2) Carry out a diffusion, one of which is divided into two small steps of diff...

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Abstract

The invention discloses a method for optimizing crystalline silicon solar cell diffusion square resistance uniformity by the aid of a high-temperature constant-temperature diffusion process route in the whole process. The method sequentially includes the steps: 1) performing oxidization by placing silicon slices into a diffusion furnace, controlling the temperature to range from 850 DEG C to 870 DEG C and leading in dry oxygen and large nitrogen for 150 seconds; 2) performing first diffusion by controlling the temperature to range from 850 DEG C to 870 DEG C and leading in dry oxygen, small nitrogen and large nitrogen for 1700 seconds; and 3) performing second diffusion by controlling the temperature at 830 DEG C and leading in large nitrogen for 150 seconds. Square resistance uniformity in a crystalline silicon cell is improved by controlling the thickness of an oxidation layer by the aid of the method. As the square resistance uniformity is improved, cell performances such as parallel resistance and cell conversion efficiency are enhanced to different degrees. The method can be continuously performed in a furnace tube, and complexity of the process and production cost cannot be increased.

Description

[0001] technical field [0002] The invention belongs to the technical field of solar cell production, and the method can be applied to the diffusion process of crystalline silicon solar cells. Background technique [0003] With the continuous development of economy and society, energy crisis and environmental pollution have become serious challenges to the survival and development of all human beings. Crystalline silicon solar cells have become an important industrial development direction because of their high photoelectric conversion efficiency, low cost, and simple process. The production of crystalline silicon solar cells occupies a leading position in global solar cell production. [0004] The production process of crystalline silicon solar cells is mainly composed of cleaning→diffusion→plasma etching→phosphorous silicon glass removal→PECVD→screen printing→testing, in which the quality of diffusion junction directly determines the improvement of efficiency. Nowadays,...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 周艺肖斌黄燕李华维何俊明郭长春欧衍聪
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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