Film structure for filter and triple-band filter utilizing same

A film structure and filter technology, applied in the direction of optical filters, layered products, etc., can solve the problems of difficult film coating, increase the difficulty of film design, etc., achieve high mechanical strength, strong bonding performance, easy to use The effect of plating

Active Publication Date: 2013-01-16
LUOYANG INST OF ELECTRO OPTICAL EQUIP OF AVIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the 1.064μm, 1.57μm and 7.7~10.5μm bands, there are very few types of film materials to choose from. Due to the requirement of micro-transmission for 1.064μm and 1.57μm wavelengths, the difficulty of film system design is increased, and there is also the difficulty of film coating. And other issues

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0038] The wave system structure for the 1.064 μm, 1.57 μm, 7.7~10.5 μm three-band filter in this embodiment is:

[0039] (1.48H1.48L)^5|ZnSe|(LH)^5

[0040] Among them, H is ZnS film layer, L is YbF 3film layer. In the film system (HL)^5, the film layer adjacent to the ZnSe substrate is the first layer, and the outermost layer is the tenth layer. The geometric thickness values ​​​​of the first to tenth layers are: the first layer is 96.4nm, the second layer 155.6nm, 3rd layer 167.5nm, 4th layer 105.3nm, 5th layer 243.5nm, 6th layer 53.6nm, 7th layer 280.4nm, 8th layer 53.2nm, 9th layer 163.5nm, 10th layer 80.5nm . In the film system (1.48H1.48L)^5, the film layer adjacent to the ZnSe substrate is the first layer, and the outermost layer is the tenth layer. The geometric thickness value of the first to tenth layers is: the first layer is 135.4nm, Layer 2 268.5nm, Layer 3 125.6nm, Layer 4 546.7nm, Layer 5 352.4nm, Layer 6 83.5nm, Layer 7 415.1nm, Layer 8 73.6nm, Layer 9 363...

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Abstract

The invention relates to a film structure for a filter and a triple-band filter utilizing the film structure. The film structure for the filter is (alpha H beta L) (N)|Sub|(LH) (N), wherein Sub represents a substrate, H represents a ZnS film layer, L represents a YbF3 film layer, N represents periodicity, and alpha and beta represent optical thickness coefficients of the film layer. The film structure for the filter is weak in susceptibility and easily plated; and the film layer has the advantages of high mechanical strength, good matching of internal stress, strong binding ability with the substrate and the like. According to the triple-band filter utilizing the film structure, the micro transmission to lasers in wavelengths of 1.064mum and 1.57mum is realized, wherein the transmissivity satisfies that T is more than or equal to 7% and less than or equal to 13%; and meanwhile, high transmission to bands in a wavelengths of 7.7-10.5mum is realized, and the average transmissivity T is more than or equal to 98%.

Description

technical field [0001] The invention belongs to the technical field of thin film manufacturing of optical parts, relates to a film structure for a filter, and also relates to a three-band filter using the film structure. Background technique [0002] The single-band detection system is easily interfered by clutter signals and is unavailable in some environments. In order to overcome this weakness of the single-band detection system, the multi-spectral detection system was born; as an important component of the multi-spectral detection system, The three-band filter can simplify the system structure and increase the detection distance of the system, so it has a wide application prospect in the multi-spectral detection system. [0003] According to the requirements of the optical system, the three-band filter should achieve partial transmission of 1.064μm and 1.57μm wavelengths, and high transmission of 7.7~10.5μm wavelengths. In the 1.064μm, 1.57μm and 7.7~10.5μm bands, there...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20B32B9/04
Inventor 王一坚
Owner LUOYANG INST OF ELECTRO OPTICAL EQUIP OF AVIC
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