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Abrasive and substrate polishing method

An abrasive and benchmark technology, applied in chemical instruments and methods, electrical components, other chemical processes, etc., can solve the problems of reducing grinding speed, increasing corrosion inhibitors, etc., and achieve the effect of inhibiting excessive corrosion

Active Publication Date: 2015-02-25
RESONAC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, if in order to prevent such a thing, add a corrosion inhibitor with strong anti-corrosion effect, or increase the addition amount of the corrosion inhibitor, there is a problem that the overall grinding speed will be reduced.

Method used

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  • Abrasive and substrate polishing method
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  • Abrasive and substrate polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0169] Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to these Examples.

[0170]

[0171] [Example and Comparative Example]

[0172] (How to make abrasives)

[0173] The metal anticorrosion agent shown in table 1 and table 2 and carboxylic acid derivative are added in the container respectively, so that the amount as the final grinding agent becomes the mixing amount as recorded in table 1, and add to make as water-soluble polymer Ammonium polyacrylate salt (manufactured by Hitachi Chemical Technology, molecular weight 8000) is used as 0.02% by mass of the final abrasive, and 3-methoxy-3-methyl-1-butanol as the organic solvent is used as the final abrasive. The amount of 1.4% by mass of the abrasive is injected into the ultrapure water, stirred and mixed, and all the components are dissolved.

[0174] Next, colloidal silica (manufactured by Fuso Chemical Industry Co., Ltd., particle size: 60 nm) as abrasive sili...

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Abstract

The invention provides an abrasive for polishing cobalt-containing layers. The abrasive comprises a carboxylic acid derivative, a metal corrosion inhibitor and water, the carboxylic acid derivative consisting of at least one selected from a phthalic compound, an isophthalic compound, an alkyl dicarboxylic compound represented by the formula (I), and salts and anhydrides of the phthalic compound, the isophthalic compound and the alkyl dicarboxylic compound. The pH is below 4.0. Formula (I): HOOC-R-COOH.

Description

technical field [0001] The invention relates to a grinding agent and a grinding method of a substrate. Background technique [0002] In recent years, along with the high integration and high performance of semiconductor integrated circuits (hereinafter referred to as "LSI"), new microfabrication technologies have been developed. The chemical mechanical polishing (hereinafter referred to as "CMP") method is also one of them, and it is a technique frequently used in the LSI manufacturing process, especially in the planarization of insulators in the multilayer wiring formation process, the formation of metal plugs, and the formation of embedded wiring. . [0003] In addition, recently, in order to improve the performance of LSIs, attempts are being made to use copper alloys as wiring materials. However, it is difficult for copper alloys to be microfabricated by the dry etching method frequently used in the conventional formation of aluminum alloy wiring. Therefore, for examp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
CPCC23F3/06C09K3/1409H01L21/30625
Inventor 三嶋公二飞田文子
Owner RESONAC CORP
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