Bidirectionally translational mechanism and zone-melting monocrystal furnace

Abstract

The invention relates to the technical field of zone melting monocrystalline silicon, and discloses a bidirectionally translational mechanism which comprises a lower translational plate fixed on an upper furnace chamber of a zone-melting monocrystal furnace, a middle translational plate slidedly assembled with the lower translational plate, an upper translational plate fixedly connected with an upper transmission of the zone-melting monocrystal furnace and slidedly assembled with the middle translational plate, a first drive unit for driving the middle translational plate to slide and being fixed relative to the lower translational plate, and a second drive unit for driving the upper translational plate to slide and being fixed relative to the middle translational plate, wherein a sliding direction of the middle translational plate relative to the lower translational plate intersects with a sliding direction of the upper translational plate relative to the middle translational plate, and the upper translational plate, the middle translational plate and the lower translational plate all have through-holes passing through the thickness direction thereof. The upper shaft of the upper transmission of the zone-melting monocrystal furnace which has the bidirectionally translational mechanism can realize movements in a plurality of directions and can automatically center, thereby improving yield of monocrystalline silicon drawing and uniformity of end surfaces of gas phase doping, and ensuring high quality of crystals. The invention further provides the zone-melting monocrystal furnace.

Description

technical field [0001] The invention relates to the technical field of zone melting single crystal silicon growth equipment, in particular to a bidirectional translation mechanism and a zone melting single crystal furnace. Background technique [0002] Before being applied to microwave communication, radar, navigation, measurement and control, medicine, high-power power station and other fields, zone-melted single crystal silicon needs to be doped to adjust the resistivity inside the crystal. The currently used doping techniques are mainly neutron transmutation doping and gas phase doping. The accuracy rate of neutron transmutation doping is high, but doping is a nuclear reaction process, and radioactive treatment and heat treatment need to be eliminated, which increases the cost of zone melting silicon single crystal while increasing the process. Another doping method is gas phase doping, directly doping the dopant into the crystal through a protective gas during the cryst...

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Problems solved by technology

[0003] However, at present, the end-face uniformity of gas phase doping resistivity is not particularly good, one of the main reasons is that it is limited by the process equipment

In the prior art zone melting single crystal furnace, the upper shaft of the upper transmission can only reciprocate in the front and rear directions, or can only reciprocate in the left and right directions, but cannot realize the four directions of front, rear, left and right at the same time. Therefore, stirring and melting Insufficient area, it is difficult to improve the uniformity of the end face of gas phase doping, and it is difficult to guarantee the high quality of the crystal

[0004] In addition, when pulling large-diameter silicon single crystals, it is necessary to ensure that the raw material polysilicon rods and heating coils are always concentric. In traditional mechanisms, only one direction can be automatically adjusted, and the other direction must be adjusted manually when the furnace is shut down. The operation is very complicated. inconvenient

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