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Method for improving crystallinity of metal film and metal film material prepared by method

A metal thin film, crystallization technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of affecting the penetration rate, excessive thickness, affecting the conductivity of the test piece T2, etc.

Inactive Publication Date: 2013-02-06
林宽锯
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As far as the thickness of the T2 test piece is concerned, its thickness is too large, which should affect its transmittance, and the Au thin film is a discontinuous film, which will also affect the conductivity of the test piece T2.
Therefore, although the Au film published by Ziping Cao et al. has a preferred orientation of (111), it cannot meet the needs of solar cells.

Method used

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  • Method for improving crystallinity of metal film and metal film material prepared by method
  • Method for improving crystallinity of metal film and metal film material prepared by method
  • Method for improving crystallinity of metal film and metal film material prepared by method

Examples

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specific example 1

[0065] A specific example 1 (E1) of the method of utilizing microwaves to improve the crystallinity of metal thin films in the present invention is substantially the same as the comparative example 1 (CE1), and its difference is that a Cu thin film of the specific example 1 (E1) is It was further placed on a silicon substrate in a vacuum chamber with a working pressure of 0.25 Torr, and the Cu thin film was subjected to microwave crystallization treatment for 60 seconds with an output power of 1100 W to obtain a crystallized Cu thin film. In the specific example 1 (E1) of the present invention, the thickness and area of ​​the silicon substrate are 375±25m and 2cm×2cm, respectively.

specific example 2

[0069] A specific example 2 (E2) of the method of utilizing microwaves in the present invention to improve the crystallinity of metal thin films is substantially the same as the specific example 1 (E1), and its difference is that the metal thin film of the specific example 2 (E2) is a A Pd thin film with a thickness of about 15 nm, and the microwave crystallization treatment was carried out for 180 seconds.

specific example 3

[0075] A specific example 3 (E3) of the method of utilizing microwaves to improve the crystallinity of a metal thin film in the present invention is substantially the same as the specific example 1 (E1), and its difference is that the metal thin film of the specific example 3 (E3) is a Au thin film with a thickness of about 10 nm, and the microwave crystallization treatment is carried out for 30 seconds.

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Abstract

The invention relates to a method for improving the crystallinity of a metal film and a metal film material prepared by the method. The method comprises the following steps: (a) forming a metal film on a substrate; (b) after the step (a), placing the substrate with the metal film on a base; and (c) after the step (b), providing microwave to the base, wherein the microwave is absorbed by the base quickly and converted into heat energy, and the heat energy is transferred to the metal film on the substrate uniformly, so that the crystallinity of the metal film is improved and the crystallized metal film is formed; and the base in the step (b) is prepared from a group consisting of the following materials: a semiconductor material, graphite and carbon fiber. The invention further provides the metal film material, which is prepared by the method and has (111) preferred orientation.

Description

technical field [0001] The invention relates to a crystallization method, in particular to a method for improving the crystallinity of metal thin films by using microwaves and a metal thin film material with (111) preferred orientation prepared by the method. Background technique [0002] In recent years, there have been many related reports on the use of microwaves to improve the crystallinity of gold (Au) thin films. [0003] Hidekazu Sueyoshi et al disclosed Microwave heating of Thin Au Film in Material Transactions, Vol.48, No.3(2007) pp.531 to 537. First, Hidekazu Sueyoshi et al. utilize sputtering or evaporation to form an Au film with a thickness of about 35 nm on a quartz (quartz) plate with a size of 10 mm × 13 mm × 1 mm; further, the The quartz plate formed with the Au thin film is placed on a quartz seat of a microwave cavity, and microwaves are provided to the microwave cavity with an output power of 1800W, thereby improving the crystallinity of the Au thin film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/14
Inventor 林宽锯许纯渊
Owner 林宽锯
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