Method for improving crystallinity of metal film and metal film material prepared by method
A metal thin film, crystallization technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of affecting the penetration rate, excessive thickness, affecting the conductivity of the test piece T2, etc.
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specific example 1
[0065] A specific example 1 (E1) of the method of utilizing microwaves to improve the crystallinity of metal thin films in the present invention is substantially the same as the comparative example 1 (CE1), and its difference is that a Cu thin film of the specific example 1 (E1) is It was further placed on a silicon substrate in a vacuum chamber with a working pressure of 0.25 Torr, and the Cu thin film was subjected to microwave crystallization treatment for 60 seconds with an output power of 1100 W to obtain a crystallized Cu thin film. In the specific example 1 (E1) of the present invention, the thickness and area of the silicon substrate are 375±25m and 2cm×2cm, respectively.
specific example 2
[0069] A specific example 2 (E2) of the method of utilizing microwaves in the present invention to improve the crystallinity of metal thin films is substantially the same as the specific example 1 (E1), and its difference is that the metal thin film of the specific example 2 (E2) is a A Pd thin film with a thickness of about 15 nm, and the microwave crystallization treatment was carried out for 180 seconds.
specific example 3
[0075] A specific example 3 (E3) of the method of utilizing microwaves to improve the crystallinity of a metal thin film in the present invention is substantially the same as the specific example 1 (E1), and its difference is that the metal thin film of the specific example 3 (E3) is a Au thin film with a thickness of about 10 nm, and the microwave crystallization treatment is carried out for 30 seconds.
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Abstract
Description
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