Metal silicide forming method

Abstract

The embodiment of the invention discloses a metal silicide forming method, comprising the following steps: a substrate is provided, and a gate region, a source region and a drain region are formed on the substrate; a metal silicide barrier layer is formed on the substrate; a photoresist layer with a gate region pattern, a source region pattern and a drain region pattern are formed on the metal silicide barrier layer; the photoresist layer with the gate region pattern, the source region pattern and the drain region pattern is used as a mask, the dry method etching process is adopted to etch the metal silicide barrier layer, the metal silicide barrier layer with the preset thickness is reserved, and the preset thickness is formed in the way that the photoresist layer with the gate region pattern, the source region pattern and the drain region pattern is used as the mask, and a primary wet method etching is carried out by adopting the DHF (dilute hydrofluoric acid) solution; the photoresist layer with the gate region pattern, the source region pattern and the drain region pattern is removed; and the metal silicide is formed on the substrate. With the adoption of the metal silicide forming method provided by the invention, the failure rate of a device is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing technology, and more specifically, relates to a metal silicide forming method. Background technique [0002] In the manufacturing process of semiconductor devices, the manufacturing process of the device includes steps: (1) formation of gate dielectric layer and gate; (2) LDD (lightly doped drain) lithography and implantation; (3) sidewall formation; (4) ) S / D (source / drain) lithography, implantation; (5) SAB (Salicide Block, metal silicide barrier layer) deposition, lithography, etching; (6) Salicide (silicide) metal process, forming metal contacts . [0003] In the traditional process, BOE solution (a mixed solution of hydrofluoric acid and ammonium fluoride) is often used when etching SAB. The BOE solution easily penetrates into the SAB protected by the photoresist through the photoresist. Corrosion of the protected SAB by the BOE solution will lead to a short circu...

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Problems solved by technology

However, after etching with DHF solution, the failure rate of the device is still high

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