Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode

A 1.193nm, thin-film component technology, applied in optical components, optics, sputtering coating, etc., can solve the problems of optical loss ArF excimer laser beam quality and output efficiency reduction, achieve wide angle tolerance and improve output efficiency , the effect of reducing the residual reflection loss

Inactive Publication Date: 2013-02-13
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The present invention aims to solve the serious optical loss caused by multiple oscillations of the existing P-polarized 193nm laser beam in the beam expander prism group of the ArF excimer laser, and the resulting reduction in the beam quality and output efficiency of the ArF excimer laser, etc. Problem, provide a preparation method of 193nm P light large-angle anti-reflection film element

Method used

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  • Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode
  • Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode
  • Method for preparing reflection-reduction film element of light P with thickness of 193nm in large angle mode

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Embodiment Construction

[0021] Specific implementation mode 1. Combination Figure 4 Describe this embodiment, the preparation method of 193nm P light large-angle anti-reflection film element, this method is realized by the following steps:

[0022] Step 1. Choose CaF 2 As the coating substrate, LaF was deposited on the substrate by vacuum thermal deposition method. 3 Monolayer and MgF 2 A single-layer film, the thicknesses of the two kinds of single-layer films are respectively 100 nm and 300 nm. and to LaF 3 Thin film layer and MgF 2 The optical constants of the film layer are analyzed, and the first-order non-uniformity model is used for the LaF3 film to obtain the LaF 3 The refractive index of the film layer at the 193nm working band is 1.68, the extinction coefficient is 0.0028, MgF 2 The refractive index of the film layer at the 193nm working band is 1.42, and the extinction coefficient is 0.00048;

[0023] Step 2, choose CaF in addition 2 As a coating substrate, multiple layers of MgF ...

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Abstract

The invention discloses a method for preparing a reflection-reduction film element of light P with thickness of 193nm in a large angle mode, and relates to the technical field of application of ArF excimer laser, and the method is used for solving the problem that the oversize optical loss is caused by surplus reflection when a 193nm laser beam in a P polarization state is incident to a beam expander prism group in a large angle mode. By utilizing the method, an LaF3 film layer and an MgF2 film layer are alternately deposited on a substrate in a vacuum heat deposition method; optical constant analysis on the LaF3 film layer and the MgF2 film layer are performed, and particularly, the thickness of the LaF3 film layer is optimized; the thickness of each LaF3 film layer is extremely compressed; and the total thickness of the multilayered LaF3 film layer is less than 40nm, so that the preparation of the reflection-reduction film element is realized. By utilizing the method, the ArF laser in the P polarization-state has extremely-low reflection ratio when being incident to 71o, and the output efficiency of the ArF laser is greatly improved.

Description

technical field [0001] The invention relates to the technical field of ArF excimer laser application, in particular to a P light large angle (71 o ) Design and fabrication of anti-reflection film elements. Background technique [0002] In recent years, 193nm ArF excimer lasers have been widely used as light sources for deep ultraviolet lithography machines. With the development of lithography technology, the power of lasers used in 193nm lithography machines is increasing day by day, thus putting forward higher requirements on the wavelength accuracy and output efficiency of ArF excimer lasers. In order to achieve high-quality ArF polarized laser output, polarization optical elements are required in the laser cavity. The polarizing optical elements in the laser cavity have an important influence on the power and polarization degree of the laser output. In the ArF excimer laser, in order to achieve an extremely narrow wavelength output, it is necessary to use a linewidth n...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/11C23C14/06C23C14/22G02B1/115
Inventor 金春水靳京城李春邓文渊常艳贺
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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