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Copper interconnect structure and method of making the same

A technology of copper interconnection structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as reduced product performance, increased dielectric capacitance, and inability to effectively block copper diffusion, and achieve good diffusion. , high density effect

Active Publication Date: 2015-10-21
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a copper interconnection structure and its manufacturing method to solve the problem that the existing diffusion barrier layer cannot effectively block copper diffusion or cause an increase in dielectric capacitance and reduce product performance

Method used

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  • Copper interconnect structure and method of making the same
  • Copper interconnect structure and method of making the same
  • Copper interconnect structure and method of making the same

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Embodiment Construction

[0022] The copper interconnection structure proposed by the present invention and its manufacturing method will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0023] Please refer to figure 1 , which is a schematic flowchart of a method for manufacturing a copper interconnection structure according to an embodiment of the present invention. like figure 1 As shown, in this embodiment, the manufacturing method of the copper interconnection structure specifically includes the following steps:

[0024] Step S10: providing a semiconductor substrate;

[0025] Step S11: forming a lower diffusion bar...

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Abstract

The invention provides a copper interconnection structure and a manufacturing method thereof. A compound containing boron and nitrogen serves as a diffusion barrier layer. The compound containing boron and nitrogen is low in dielectric coefficient, which is usually between 4.0 and 4.5. In addition, the compound containing boron and nitrogen can be well attached to copper and is high in density, so that diffusion barrier of copper can be well achieved.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing process, in particular to a copper interconnection structure and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of VLSI chips has reached the scale of hundreds of millions or even billions of devices, and the technology of multilayer metal interconnection lines with more than two layers is widely used. Traditional metal interconnects are made of aluminum metal, but with the continuous reduction of device feature size in integrated circuit chips, the current density in metal interconnects continues to increase, and the required response time continues to decrease. Traditional Aluminum interconnection wires can no longer meet the requirements. After the process size is less than 130nm, copper interconnection wire technology has replaced aluminum interconnection wire technology. Compared with aluminum, metall...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/532
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP