Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper interconnection structure and forming method thereof

A copper interconnection structure, interconnection structure technology, applied in the direction of electrical components, electrical solid devices, semiconductor/solid device manufacturing, etc., can solve the problems of large resistance value of copper interconnection structure, complex formation process, etc., to improve the diffusion barrier Function, simple process and high efficiency

Inactive Publication Date: 2013-03-06
SEMICON MFG INT (SHANGHAI) CORP
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The problem to be solved by the present invention is to provide a copper interconnection structure and its forming method to solve the problems of the existing copper interconnection structure with large resistance value and complex formation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper interconnection structure and forming method thereof
  • Copper interconnection structure and forming method thereof
  • Copper interconnection structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] It can be seen from the background art that the resistance value of the copper interconnection structure formed by the existing method is relatively large, and the process is complicated. Please continue to refer Figure 4 , the inventor has conducted research on the above-mentioned problems, and thinks that the main reason why the resistance value of the copper interconnection structure formed by the existing method is relatively large is: metal atoms other than copper in the metal seed layer 150 (such as: aluminum in copper-aluminum alloys) or manganese in copper-manganese alloy) will gather and migrate between the metal seed layer 150 and the barrier layer 140, thereby causing the resistance value of the copper interconnect structure to increase; in addition, due to the tantalum nitride at the bottom of the copper interconnect structure The resistance value is relatively large, so the bottom resistance of the copper interconnection structure will be relatively large....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a copper interconnection structure and a forming method of the copper interconnection structure. The forming method of the copper interconnection structure provided by the invention comprises the steps of providing a semiconductor lining, wherein a first medium layer and a first interconnection structure running through the first medium layer are formed on the surface of the semiconductor lining; forming a second medium layer on the surfaces of the first medium layer and the first interconnection structure, wherein the material of the second medium layer contains oxygen atoms, and the second medium layer is provided with a through hole for exposing the first interconnection structure; forming alloy blocking layers on the side wall and the bottom part of the through hole; and forming copper layers completely filling the through hole on the surfaces of the alloy blocking layers. The forming method provided by the invention is simple in technique, low in cost and capable of reducing the resistivity of the copper interconnection structure.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a copper interconnection structure and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of VLSI chips has reached hundreds of millions or even billions of devices, and multi-layer metal interconnection technology with more than two layers is widely used. Traditional metal interconnects are made of aluminum metal, but with the continuous reduction of device feature size in integrated circuit chips, the current density in metal interconnect lines continues to increase, and the required response time continues to decrease. Traditional aluminum The interconnection line can no longer meet the requirements. After the process size is smaller than 130nm, the copper interconnection line technology has replaced the aluminum interconnection line technology. Compared with aluminum, metallic copper has a lower resist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768H01L23/532
Inventor 鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com