Heavy-current P-type silicon-on-insulator lateral insulated gate bipolar transistor

Abstract

The invention relates to a heavy-current P-type silicon-on-insulator lateral insulated gate bipolar transistor comprising an N-type substrate. A buried oxide layer is arranged on the N-type substrate, a P-type epitaxial layer is arranged on the buried oxide layer, and a P-type buffer trap region, an N-type body region and a P-type central buffer well region are arranged at the inner part of the P-type epitaxial layer; an N-type drain region is arranged in the P-type buffer well region; a P-type source region and an N-type body contact region are arranged in the N-type body region; a P-type base region and an N-type emitter region are arranged in the P-type central buffer well region; the surface of the P-type epitaxial layer is provided with a gate oxide layer and a field oxide layer; the surface of the gate oxide layer is provided with a polysilicon gate; and a passivation layer and a metal layer are arranged within a certain range of the surface of the transistor. The heavy-current P-type silicon-on-insulator lateral insulated gate bipolar transistor is characterized in that the transistor is of a symmetrical structure, and the drain metal on the N-type drain region is connected with the base metal on the corresponding P-type base layer through the metal layer, and is output from the N-type emitter region; and due to the structure, can effectively improve the current density can be effectively improved on the basis of not increasing the area of the transistor.

Description

technical field [0001] The invention relates to the field of high-voltage power semiconductor devices, specifically, a P-type silicon-on-insulator lateral insulated gate bipolar transistor that is suitable for high-voltage applications and can increase current density, and is suitable for plasma flat panel display equipment and half-bridge drive circuits. And driver chips in the field of automobile production. Background technique [0002] With the continuous development of electronic power technology, power semiconductor devices, as the basic electronic components for energy control and conversion in electronic power systems, have received more and more attention. The technical requirements for improving the performance of power semiconductor devices are mainly reflected in the aspects of device integration, high withstand voltage, high current and good isolation from low-voltage circuit parts. The specific types of power semiconductor devices determine the ability of powe...

AI Technical Summary

Problems solved by technology

[0005] Compared with vertical devices, the current density of silicon-on-insulator lateral insulated gate bipolar devices is not high enough. This problem is usually solved by increasing the area of ​​lateral devices to obtain high current drive capability, but increasing the area consumes more chips area at the expense of increased cost

Images