Manufacturing method of array substrate for liquid crystal display
A technology for liquid crystal display devices and array substrates, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve problems such as difficulty in use, copper metal layer damage, etc., achieve simplified etching process, excellent etching uniformity, and prevent electrical short circuit or the effect of poor wiring
Active Publication Date: 2013-03-20
DONGWOO FINE CHEM CO LTD
View PDF7 Cites 21 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
But, under the situation of above-mentioned patent, because the damage of hydrochloric acid to copper metal layer is serious, there is the shortcoming that is difficult to use
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1 to Embodiment 28、 comparative example 1 to comparative example 15
[0100] Example 1 to Example 28, Comparative Example 1 to Comparative Example 15: Preparation of etchant composition
[0101] According to the compositions shown in Table 1 below, 180 kg of etchant compositions of Examples 1 to 28 and Comparative Examples 1 to 15 were prepared.
[0102] [Table 1]
[0103]
[0104] ATZ: Aminotetrazole
[0105] [Table 2]
[0106]
[0107]
[0108] ATZ: Aminotetrazole
[0109] PTSA: p-toluenesulfonic acid
[0110] SFA: sulfanilic acid
[0111] [table 3]
[0112]
[0113] ATZ: Aminotetrazole
[0114] [Table 4]
[0115]
[0116] ATZ: Aminotetrazole
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a manufacturing method of an array substrate for a liquid crystal display, and the method comprises steps of: a) forming a grid on the substrate; b) forming a gate insulation layer on the substrate comprising the grid; c) forming a semiconductor layer on the gate insulation layer; d) forming a source electrode / drain electrode on the semiconductor layer; and e) forming a pixel electrode connected with the drain electrode; the step a) comprises steps of: forming a copper based metal film on the substrate, a multi-layer of a copper based metal layer and a metal oxide film, or a multi-layer of a copper based metal layer and a molybdo-based metal layer; and etching the film to form the grid through etching agent composition; the step d) comprises steps of: forming a copper based metal layer on the semiconductor, a multi-layer of a copper based metal layer and a metal oxide film, or a multi-layer of a copper based metal layer and a molybdo-based metal layer; and etching the film to from the source electrode / drain electrode through the etching agent composition.
Description
technical field [0001] The invention relates to a method for manufacturing an array substrate for a liquid crystal display device. Background technique [0002] The process of forming metal wiring on a substrate of a liquid crystal display device generally includes a process of forming a metal film using sputtering or the like, performing a process of applying a photoresist, forming a photoresist on a selective region based on exposure and development, and A process of etching is performed, and a cleaning process and the like are performed before and after each individual process. The etching process refers to a process of forming a metal film on a selective region using a photoresist as a mask, and generally includes dry etching using plasma or the like, or wet etching using an etchant composition. [0003] In this liquid crystal display device, resistance of metal wiring has recently become a major focus of attention. This is because, in the thin film transistor-liquid c...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L21/48G02F1/1362G02F1/1368
Inventor 李铉奎李石李恩远郑敬燮金镇成田玹守
Owner DONGWOO FINE CHEM CO LTD