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Crucible cover for large size sapphire single crystal growth furnace

A sapphire and growth furnace technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as atomic vacancies cannot be eliminated, adverse effects on crystal quality, etc., achieve obvious social and economic benefits, and reasonable temperature field distribution , the effect of cost control

Active Publication Date: 2016-01-06
哈尔滨秋冠光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some impurities (such as carbon impurities) can be eliminated by the annealing process, the atomic vacancies left after the impurities are taken out cannot be eliminated, which has a negative impact on the crystal quality

Method used

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  • Crucible cover for large size sapphire single crystal growth furnace
  • Crucible cover for large size sapphire single crystal growth furnace

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0024] combine Figure 1-2 , In this embodiment, the crucible cover is made of a circular multilayer molybdenum sheet 1, and the multilayer molybdenum sheet 1 has a circular central hole 4, and the diameter of the central hole gradually decreases from top to bottom. One room of multilayer molybdenum sheets is connected and fixed by molybdenum bolts 2 and matching molybdenum nuts 3 , and one room of multilayer molybdenum sheets is separated by molybdenum nuts 3 . The outer diameter of the molybdenum sheet is 320mm, the inner diameter of the uppermost molybdenum sheet is 260mm, and the inner diameter of each layer of molybdenum sheets is 16mm smaller than that of the previous layer; the thickness of the top two layers of molybdenum sheets is 2mm, and the thickness of the bottom two layers of molybdenum sheets is 4mm. The thickness of the middle 4 laye...

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Abstract

The invention provides a crucible cover of a big-size sapphire single crystal growth furnace, which is made of round multilayer molybdenum plates; the multilayer molybdenum plates are provided with round center holes, the diameters of center holes are gradually reduced from top to bottom, the multilayer molybdenum plates are connected and fixed by a plurality of groups of molybdenum bolts and matched molybdenum nuts and are separated by the molybdenum nuts. According to the invention, the number of layers, the thickness, the interval, the distribution of sizes of center holes of the molybdenum plates are reasonably designed, so that a uniform and stable thermal field is favorably formed; and while the cost is reasonably controlled, the crucible cover has certain structural strength and long service life.

Description

(1) Technical field [0001] The invention belongs to the large-size sapphire single crystal growth furnace technology, in particular to a crucible cover for a large-size sapphire single crystal single crystal furnace. (2) Background technology [0002] Sapphire is an aluminum oxide (Al 2 o 3 ) single crystal, belonging to the hexagonal crystal system, its hardness is very high, the Mohs hardness is 9, second only to diamond. It also has the advantages of corrosion resistance, high temperature resistance, and good optical transparency, and can be used as a window material in various extreme or special environments. In addition, compared with other current semiconductor substrate materials, sapphire has better cost performance, so it is widely used in semiconductor lighting. [0003] With the continuous development of precision microelectronics technology, semiconductor lighting technology, aerospace, and infrared military equipment and other fields, higher requirements are ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B17/00C30B11/00C30B29/20
Inventor 左洪波张学军郑海涛丁广博吴俣
Owner 哈尔滨秋冠光电科技有限公司
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