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Novel nanosheet film for sensor and preparation method thereof

A technology of nanosheets and sensors, which is applied in the field of new nanosheet films and their preparation, can solve the problems of gas-sensing properties that have not been reported, and achieve the effects of low production cost, uniform thickness, and simple process

Inactive Publication Date: 2013-03-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has not been reported that the in-situ growth of nanosheets has not been reported, and the related gas-sensing properties have not been reported.

Method used

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  • Novel nanosheet film for sensor and preparation method thereof
  • Novel nanosheet film for sensor and preparation method thereof
  • Novel nanosheet film for sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The preparation steps of the tungsten oxide nanosheet thin film with metal tungsten sheet as the reaction matrix are as follows:

[0030] The first step is to cut the pure tungsten sheet into a size of 15 mm×15 mm, carefully polish it with 500#, 1000#, 2000# sandpaper, and then ultrasonically clean it with acetone and deionized water for 10 minutes each.

[0031] The second step uses analytically pure Na 2 WO 4 2H 2 O, FeSO 4 ·7H 2 O and (NH 4 ) 2 C 4 h 4 o 6 Prepare an electrolyte solution containing tungsten and iron ions, in which Na 2 WO 4 2H 2 O, FeSO 4 ·7H 2 O and (NH 4 ) 2 C 4 h 4 o 6 The concentrations were 0.25 mol / L, 0.02 mol / L and 0.25 mol / L in turn, and the pH value of the electrolyte was adjusted to 4 with sulfuric acid, and the electrolyte was prepared with deionized water.

[0032] The third step is to put the prepared electrolyte into a beaker, place it in a water bath, connect the cathode to the substrate pretreated in step 1, and con...

Embodiment 2

[0041] The preparation steps of the molybdenum oxide nanosheet thin film with metal copper sheet as the reaction matrix are as follows:

[0042] The first step is to cut the copper sheet into 15 mm×15 mm, and sand it with 500#, 1000#, 2000# sandpaper before deposition, and ultrasonically clean it with acetone and deionized water.

[0043] The second step to analyze pure Na 2 MoO 4 2H 2 O, FeSO 4 ·7H 2 O and (NH4) 2 C 4 h 4 o 6 Prepare an electrolyte solution containing molybdenum and iron ions, in which Na 2 MoO 4 2H 2 O, FeSO 4 ·7H 2 O and (NH4) 2 C 4 h 4 o 6 The concentrations were 0.15 mol / L, 0.03 mol / L and 0.3 mol / L respectively, and the pH value of the electrolyte was adjusted to 5.5, and the electrolyte was prepared with deionized water.

[0044] The third step is to put the prepared electrolyte into a beaker, place it in a water bath, connect the cathode to the substrate pretreated in step 1, and connect the anode to the graphite sheet. Start the water...

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Abstract

The invention belongs to the cross field of semiconductor materials and chemical engineering, relates to a preparation method of a sensor film, and particularly relates to a novel nanosheet film for a sensor and a preparation method thereof. The nanosheet film comprises of 35-100 wt% of one or more selected from nanosheet WO3 and MoO3, and 0-65 wt% of one or more selected from W and Mo. According to the invention, one or more selected from Na2WO4 and Na2MoO4, FeSO4, and (NH4)2C4H4O6 are used to prepare an electrolyte; an alloy coating is prepared by electrodeposition coating; the alloy coating grows on substrate metal sheet in situ; Fe component in the alloy is removed; and the nanosheet deposition film is oxidized to obtain the product. The method provided by the invention does not require sophisticated equipment or dangerous medicine and solvent, and has the advantages of simple process, low production cost, and uniform thickness of the nanosheet WO3 film.

Description

technical field [0001] The invention belongs to the intersecting field of semiconductor materials and chemical engineering technology, relates to a preparation method of a sensor thin film, in particular to a novel nanosheet thin film which can be used for a sensor and a preparation method thereof. Background technique [0002] The semiconductor type gas sensor uses the gas to be measured to carry out adsorption reaction on the surface of the sensing material, and the surface of the sensing material will absorb or release excess electrons, which will change the electron density on the surface of the sensing material, thus causing the change of the resistance value of the sensing material, thus The concentration of the gas to be measured is determined according to the variation of its resistance. [0003] Tungsten trioxide is an n-type metal oxide semiconductor with a wide band gap. As an important functional material, it is widely used in fields such as gas sensors and high-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12C23F17/00
Inventor 凌云汉高武斌
Owner TSINGHUA UNIV
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