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Planarization method for high-temperature superconducting coated conductor substrate

A planarization method and technology of coated conductors, which are applied in the direction of chemical instruments and methods, coatings, and devices for coating liquid on the surface, etc., can solve the problems of low efficiency, high cost, and difficulty in wide-scale use, and achieve simple process , low cost, wide application effect

Inactive Publication Date: 2013-04-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Mechanical polishing is a good method to obtain a smooth substrate, but due to high cost and low efficiency, it is not suitable for the preparation of long strips or large-area coatings; and electrochemical polishing is only suitable for certain super heat-resistant nickel Alloy materials, difficult to use on a large scale

Method used

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  • Planarization method for high-temperature superconducting coated conductor substrate
  • Planarization method for high-temperature superconducting coated conductor substrate
  • Planarization method for high-temperature superconducting coated conductor substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1: Preparation of SiO by chemical solution method 2 A method for flattening a thin film for a high-temperature superconducting coating conductor substrate, the specific implementation steps are as follows:

[0035] (1) Dissolve 6.24g tetraethyl orthosilicate in 30ml of isopropanol, completely dissolve and mix evenly under magnetic stirring at room temperature, add 10ml of methanol and heat to 40~50°C with magnetic stirring, carry out vacuum distillation to remove water, and finally Add isopropanol to make up to 50ml, that is, the anhydrous SiO formed by the preparation 2 The molar concentration of Si ions in the first precursor solution is 0.6 mol / l.

[0036] (2) Take anhydrous SiO in step (1) 2 Precursor solution 5ml, add isopropanol solvent to dilute, and set the volume to 50ml, that is, the anhydrous SiO formed by the preparation 2 The molar concentration of Si ions in the second precursor solution is 0.06 mol / l.

[0037] (3) Drop the first precursor soluti...

Embodiment 2

[0042] Example 2: Preparation of SiO by chemical solution method 2 A method for flattening a thin film for a high-temperature superconducting coating conductor substrate, the specific implementation steps are as follows:

[0043] (1) Dissolve 1.04g of tetraethyl orthosilicate in 10ml of isopropanol, completely dissolve and mix evenly under magnetic stirring at room temperature, add 5ml of methanol and heat to 40~50°C with magnetic stirring, carry out vacuum distillation to remove water, and finally Add isopropanol to dilute to 20ml, that is, the anhydrous SiO formed by the preparation 2 The molar concentration of Si ions in the first precursor solution is 0.25 mol / l.

[0044] (2) Take anhydrous SiO in step (1) 2 Precursor solution 4ml, dilute with isopropanol solvent, and set the volume to 50ml, that is, the anhydrous SiO 2 In the second precursor solution, the molar concentration of Si ions is 0.02 mol / l.

[0045] (3) Drop the first precursor solution in step (1) on the s...

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Abstract

The invention discloses a planarization method for a high-temperature superconducting coated conductor substrate, belonging to the technical field of preparation of a high-temperature superconducting material. The planarization method comprises the following steps of: (1) preparing anhydrous precursor solution, i.e., fully dissolving and uniformly mixing a silicon source and a solvent according to a predetermined proportion, adding ethanol, heating, stirring, distilling under low pressure to remove water, and fixing volume to form the anhydrous precursor solution; (2) coating first precursor solution on the surface of a substrate, performing spin coating, and annealing; and (3) uniformly coating second precursor solution on the substrate to form a solution film, performing spin coating and annealing to guarantee that the root mean square roughness of the surface of the thin film is less than 2 nm. An amorphous thin film prepared by the invention has not only an effect of leveling the substrate but also an effect of obstructing diffusion in a high-temperature superconducting coted conductor structure.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting material preparation, and relates to a method for planarizing solution deposition of a coated conductor texture substrate. Background technique [0002] With the development trend of the next generation of electronic products towards intelligence, integration and humanization, flexible substrates are more and more widely used, such as display screens, printed circuit boards, advanced energy materials (such as solar cells), and High temperature superconducting coated conductors (HTSCCs), etc. Compared with traditional materials, flexible substrates have the advantages of high mechanical strength, small volume, and large specific surface area. More importantly, the cost of industrial manufacturing can be greatly reduced when prepared by the roll-to-roll (reel to reel) winding method; however The surface roughness of industrial flexible substrates is often not as high as req...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D5/12B05D3/00B05D3/04C01B33/145
Inventor 郭培熊杰陶伯万程崛杨科赵晓辉李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA