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Preparation device and preparation method for silicon ball

A technology for preparing devices and silicon spheres, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of increased processing costs, slow cooling speed and small grain silicon blocks, and secondary pollution of metals, and achieves improved Fluidity, viscosity reduction effect

Inactive Publication Date: 2013-04-03
XIAMEN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Impurities are often distributed at the grain boundaries, and the cooling rate of silicon liquid is relatively slow during the cooling process of large silicon ingots, and it is not easy to form silicon blocks with small grains, which is not conducive to crushing and pickling removal of impurities
And in the process of powder processing, it will cause secondary pollution of metal and increase processing cost

Method used

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  • Preparation device and preparation method for silicon ball
  • Preparation device and preparation method for silicon ball
  • Preparation device and preparation method for silicon ball

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] Take 10kg of metallurgical grade silicon powder and place it in a graphite crucible with an initial boron content of 15ppmw. Slagging agent: Na 2 CO 3 -SiO 2 -NaF, wherein the mass percentage of each component is: Na 2 CO 3 : 4kg; SiO 2 : 5kg; NaF: 1kg. Start the heating, the power is 50kW, the heating time is 1h, the silicon powder is completely melted, and the temperature of the silicon liquid is 1700°C.

[0062] Add slagging agent to the silicon liquid, the power is 50kW when adding slag, and the time for slag adding is 10min; the power for slag melting is 55kW, and the time for slag melting is 10min; After the slagging is completed, turn off the power and let it stand for 15 minutes; rotate the furnace body and dump the upper layer of slagging agent. The shunt starts heating, the power is 25kW, the temperature of the shunt is kept at 1600°C, and the silicon liquid is poured into the shunt.

[0063] When the height between the outlet of the diverter and the l...

Embodiment 2

[0067] A 10kg metallurgical grade silicon block was taken and placed in a graphite crucible, and the initial boron content of the silicon block was 15ppmw.

[0068] Take 20kg of evenly mixed slag agent and place it in the feeding bin on the top of the crucible. Slagging agent: Na 2 CO 3 -SiO 2 -NaF, wherein the mass percentage of each component is: Na 2 CO 3 : 10kg; SiO2 2 : 8kg; NaF: 2kg. Start heating, the power is 60kW, the heating time is 1.5h, the silicon block is completely melted, and the temperature of the silicon liquid is 1750°C at this time.

[0069] Add slagging agent to the silicon liquid, the power is 50kW when adding slag, and the time for slag adding is 15min; the power for slag melting is 55kW, and the time for slag melting is 15min; After the slagging is completed, turn off the power and let it stand for 20 minutes; rotate the furnace body and dump the upper layer of slagging agent. The shunt starts heating, the power is 25kW, the temperature of the sh...

Embodiment 3

[0072] Take 10 kg of metallurgical grade silicon powder and place it in a graphite crucible, the initial boron content of the silicon powder is 15 ppmw.

[0073] Take 30kg of evenly mixed slag agent and place it in the feeding bin on the top of the crucible. Slagging agent: Na 2 CO 3 -SiO 2 -NaF, wherein the mass percentage of each component is: Na 2 CO 3 : 18kg; SiO2 2 : 9kg; NaF: 3kg. Start the heating, the power is 50kW, the heating time is 2h, the silicon powder is completely melted, and the temperature of the silicon liquid is 1700°C.

[0074] Add slagging agent to the silicon liquid, the power is 50kW when adding slag, and the time for slag adding is 20min; the power for slag melting is 55kW, and the time for slag melting is 20min; After the slagging is completed, turn off the power and let it stand for 20 minutes; rotate the furnace body and dump the upper layer of slagging agent. The shunt starts heating, the power is 25kW, the temperature of the shunt is kept a...

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Abstract

The invention discloses a preparation device and a preparation method for a silicon ball and relates to a silicon ball. The preparation device for the silicon ball comprises an induction coil, a graphite insulation board, a graphite crucible, a flow divider, a cooling tank, a water inlet pipe, a water outlet pipe, a gas inlet pipe and an electric pump. The preparation method for the silicon ball comprises the following steps of: using a metallurgical-grade silicon material as the raw material and placing the silicon material into the crucible of an induction furnace; starting an induction furnace power supply to heat and after totally melting the silicon material, adding a slag forming constituent; after completing slag forming, switching off the induction furnace power supply; standing and removing waste residues floating at the upper part of the crucible to obtain silicon liquid; starting the flow divider to carry out preheating and when the temperature in the flow divider reaches the range of 1,450 to 1,650 DEG C, pouring the silicon liquid into the flow divider; regulating the heights of a liquid outlet at the bottom of the flow divider and the cooling tank to enable the silicon liquid to fall into the cooling tank in a droplet shape to be quenched; and filling gas into the cooling tank and after completing quenching, and obtaining the silicon ball. Boron content can be obviously reduced; the obtained silicon ball comprises small crystal grains and is easy to crush and process; and an ideal low-boron raw material can be provided for an acid pickling process.

Description

technical field [0001] The invention relates to a silicon ball, in particular to a silicon ball preparation device and a preparation method thereof. Background technique [0002] With the increasingly serious energy crisis, the development of sustainable and environmentally friendly new energy has become a hot spot of global concern. As a clean, efficient and renewable new energy, solar energy has become the focus of new energy development in various countries. At present, among many types of solar cells, polysilicon is the main raw material for preparing solar cells. The preparation technology of metallurgical solar-grade polysilicon has the characteristics of simple process, low cost and low environmental pollution, and will become an important way for the new preparation technology of solar-grade polysilicon. The purity of raw silicon usually used to prepare solar cells should not be lower than 99.9999%, and the content of impurity element B should be less than 0.3ppmw, ...

Claims

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Application Information

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IPC IPC(8): C01B33/021
Inventor 罗学涛盛之林刘应宽方明卢成浩黄柳青赖惠先张旭平乔礼宁
Owner XIAMEN UNIV
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