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Oxide semiconductor

一种氧化物半导体、锌氧化物的技术，应用在半导体器件、半导体/固态器件制造、晶体管等方向，能够解决低效率等问题，达到特性改善的效果

Active Publication Date: 2013-04-03
SAMSUNG DISPLAY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, studies have been conducted on adding new materials to raw materials to improve the characteristics of oxide semiconductors; however, the conventional method for determining the added materials, which is carried out in the periodic table without a theoretical basis, is inefficient because for this method Fabricated samples of thin film transistors and verified their characteristics

Method used

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Embodiment Construction

[0040] The invention will be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals refer to the same elements throughout.

[0041] It will be understood that when an element or layer is referred to as being “on” or “connected to” or “coupled to” another element or layer, it can be directly on, directly connected to, or directly on the other element or layer. may be coupled to another element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another eleme...

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Abstract

The invention provides an oxide semiconductor. The oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Description

technical field [0001] Exemplary embodiments of the present invention relate to an oxide semiconductor, a thin film transistor including the oxide semiconductor, and a thin film transistor array panel including the thin film transistor. Background technique [0002] For example, flat panel displays such as liquid crystal displays (LCD), organic light emitting diode (OLED) displays, electrophoretic displays, plasma displays typically include pairs of field generating electrodes and a photovoltaically active layer interposed between the pairs of field generating electrodes. The LCD includes a liquid crystal layer as a photoelectrically active layer, and the OLED includes an organic light emitting layer as a photoelectrically active layer. In a flat panel display, one of a pair of electric field generating electrodes may be connected to a switching element to receive an electrical signal, and the photoactive layer converts the electrical signal into an optical signal to display...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/24
CPCH01L29/7869H01L21/02565H01L27/1225H01L29/66969
Inventor 安秉斗李制勋朴世容朴埈贤金建熙林志勋朴在佑朴镇成钉宫敏洋三木绫森田晋也岸智也田尾博昭
Owner SAMSUNG DISPLAY CO LTD