ZnO piezoelectric film for surface acoustic wave filter
A technology of piezoelectric film and surface acoustic wave, applied in the direction of electrical components, impedance networks, etc., can solve problems such as large insertion loss
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Embodiment 1
[0019] The Ti, Nb and Mn doped ZnO piezoelectric film was prepared on the diamond substrate material by physical vapor deposition, wherein the atomic percentage of Ti was 4%; the atomic percentage of Nb was 3%, and the atomic percentage of Mn was 3% , the piezoelectric constant d of the prepared doped ZnO piezoelectric film 33 is 150pC / N, and the resistivity ρ is 10 9 Ω cm, with a thickness of 250nm; on the doped ZnO piezoelectric film prepared above, an input IDT and an output IDT with a width of 600nm were fabricated by an electron beam direct writing process to obtain a surface acoustic wave filter device.
[0020] The frequency of the surface acoustic wave filter prepared above is 8GHz, and the electromechanical coupling coefficient is as high as 4.3% and the insertion loss is 13dB.
Embodiment 2
[0022] Adopt chemical vapor deposition method to prepare Ti, Nb and Mn doped ZnO piezoelectric film on diamond-like substrate material, the atomic percent of Ti is 4.5%; The atomic percent of Nb is 5%, and the atomic percent of Mn is 4.5%, The piezoelectric constant of the prepared ZnO piezoelectric film is d 33 is 190pC / N, and the resistivity ρ is 10 10 Ω cm, with a thickness of 350nm; on the doped ZnO piezoelectric film prepared above, an input IDT and an output IDT with a width of 500nm were fabricated by an electron beam direct writing process to obtain a surface acoustic wave filter device.
[0023] The frequency of the surface acoustic wave filter prepared above is 9GHz, and the electromechanical coupling coefficient is as high as 6.6% and the insertion loss is 11dB.
Embodiment 3
[0025] Ti, Nb and Mn doped ZnO piezoelectric thin films were prepared on sapphire substrate materials by sol-gel method, the atomic percentage of Ti was 2.5%; the atomic percentage of Nb was 4.6%, and the atomic percentage of Mn was 3.8%, The piezoelectric constant of the prepared doped ZnO piezoelectric film is d 33 is 240pC / N, and the resistivity ρ is 10 8 Ω cm, with a thickness of 300nm; on the doped ZnO piezoelectric film prepared above, an input IDT and an output IDT with a width of 300nm were fabricated by an electron beam direct writing process to obtain a surface acoustic wave filter device.
[0026] The frequency of the surface acoustic wave filter prepared above is 11 GHz, and the electromechanical coupling coefficient is as high as 6.2% and the insertion loss is 7 dB.
[0027] The beneficial effects of the present invention are as follows: the use of a new doped ZnO piezoelectric film has a large piezoelectric response and high resistivity, and the interdigital tr...
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