Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of one-dimensional magnetic nanowire array with ultrahigh axial remanence ratio

A technology of magnetic nanometer and remanence ratio, which is applied in the direction of nanotechnology, chemical instruments and methods, single crystal growth, etc., can solve the problems of low magnetic parameters and cannot meet the needs of practical applications, and achieve the effect of good universality

Inactive Publication Date: 2013-04-10
UNIV OF SHANGHAI FOR SCI & TECH
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] The invention solves the problem that the magnetic parameters such as coercive force and remanence ratio are too low to meet the needs of practical applications in the process of preparing nanowire arrays by direct current electrodeposition of the template method, and proposes high overpotential growth with ultra-high axial remanence ratio Fabrication method of one-dimensional nanowire array

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of one-dimensional magnetic nanowire array with ultrahigh axial remanence ratio
  • Preparation method of one-dimensional magnetic nanowire array with ultrahigh axial remanence ratio
  • Preparation method of one-dimensional magnetic nanowire array with ultrahigh axial remanence ratio

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Example 1 Taking the alumina template as an example, the preparation process of the alumina template includes the following steps:

[0055] a1. The first anodic oxidation: the aluminum sheet after degreasing and polishing is used as the anode, copper is used as the cathode, the electrolyte is phosphoric acid, the temperature is kept at 0°C, the voltage between the electrodes is 40V, anodized for 12 hours, and formed on the surface of the aluminum sheet Aluminum oxide layer.

[0056] a2. Removing the alumina layer for the first time: use a mixed solution of 15wt% chromic acid and 10wt% phosphoric acid at a volume ratio of 1:5 to remove the formed alumina layer and wash it.

[0057] a3, the second anodic oxidation: the aluminum sheet after removing the aluminum oxide layer in step a2 is used as the anode, and the copper is used as the cathode for the second anodic oxidation. The electrolyte is sulfuric acid, the temperature is maintained at 0°C, and the voltage between th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a one-dimensional magnetic nanowire array with an ultrahigh axial remanence ratio. An alumina template with uniformly-distributed through holes is prepared by using a two-time anodic oxidation method, and then, direct-current electrodeposition is carried out to prepare the magnetic nanowire array. In the electrodeposition process, a layer of silver as a cathode is sputtered on one side of the alumina template, a metal to be plated is used as an anode and placed in a plating tank, and a metal salt solution to be plated, contained in the plating tank, is used as a plating solution. A set voltage is added between the cathode and the anode, the current in a circuit is controlled at a constant value, then electrodeposition is carried out, and the deposition time is set according to the length of a required nanowire, thus the nanowire array growing in a template hole is obtained. By using the method, the nanowire array with an ultrahigh axial remanence ratio can be prepared, and meanwhile, good controllability can be achieved in the deposition process.

Description

technical field [0001] The invention belongs to the technical field of magnetic one-dimensional nanowire arrays, and in particular relates to a method for preparing a one-dimensional magnetic nanowire array with ultra-high axial remanence ratio. Background technique [0002] Magnetic nanowire arrays have potential applications in discrete media perpendicular magnetic recording, magnetic nanodevices, magneto-optical devices, and microwave devices. Most of these applications require the nanowire array to have a high axial remanence ratio, but the magnetic nanowire arrays reported so far do not have a high axial remanence ratio. There are many methods to prepare magnetic one-dimensional nanowire arrays, such as photolithography, self-assembly, template method, etc. [0003] The template method can be divided into alumina templates, crystal steps, polymer templates, biomolecular templates, etc. according to different templates. [0004] Regular arrays can be obtained by photol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/12C30B29/62C30B29/02B82Y40/00
Inventor 田丰陈宏斌蹇敦亮刘毅
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com