Photomask structure and manufacturing method thereof

Abstract

The invention provides a photomask structure which comprises a substrate, a photomask pattern positioned on the surface of the substrate, one or multiple transparent protective layers covering the surface of the photomask pattern, and a mask film arranged above the transparent protective layer(s), wherein the mask film covers a region of the photomask pattern; and the invention further provides a manufacturing method of the above photomask structure, wherein the manufacturing method comprises the following steps: preparing the photomask pattern on the surface of the substrate; forming one or multiple transparent protective layers on the surface of the photomask pattern; and mounting the mask film on the substrate. According to the invention, one or multiple transparent protective layers is / are deposited on the surface of the photomask pattern, so that the photomask pattern can be protected, and the crystallographic defects formed on the surface of the photomask pattern can be reduced and avoided, so that the projection accuracy and the yield of the photomask are improved, the repair rate of the photomask is reduced, and the service life of the photomask is prolonged.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a photolithography plate structure and a manufacturing method thereof. Background technique [0002] The problem of crystalline defects in photolithographic plates has always been a major problem in the field of integrated circuits. As the photoresist plate is used more often and the photoresist plate is stored longer, crystal defects will grow on the surface of the photoresist plate, and the longer it is, the more crystal defects will directly cause the normal pattern of the photoresist plate projected on the silicon wafer to occur. Defects lead to lower yields. Please refer to the photoresist plate structure in the prior art figure 2 b, generally includes a substrate, a photoresist pattern 11 on the substrate 12, and a mask 13. figure 1 It is a schematic diagram of the preparation process of the manufacturing method of the photoresist plate structur...

AI Technical Summary

Problems solved by technology

[0003] In order to prevent the decrease of the yield of silicon wafers caused by the crystalline defects of the lithography plate, in the integrated circuit manufacturing process, the lithography plate must be regularly scanned for defects to monitor the growth of crystal defects. Due to the large number of lithography plates and frequent use, the defect detection The cost of scanning and monitoring is very high; in addition, when defects are scanned, the photoresist plate must be sent back to the photoresist plate manufacturer for cleaning to remove crystal defects. This cleaning will cause damage to the surface pattern of the photoresist plate, especially for The phase shift layer on the surface of the phase shift photoresist plate, due to the increase in the number of cleanings, leads to a decrease in the thickness of the phase shift layer, and the decrease in the thickness of the phase shift layer will lead to a decrease in the phase shift value and an increase in the transmittance. When the phase shift value and the transmittance Exceeding the specifications will directly cause the photolithography plate to be scrapped

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