Semiconductor apparatus

A technology of semiconductors and wires, applied in the field of semiconductor devices, can solve problems such as the reduction of the amplification factor of the amplifier circuit, achieve good frequency characteristics and maintain stability

Inactive Publication Date: 2013-04-24
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This inductance component has a high impedance in the high frequency band, and thus will cause a decrease in the amplification factor of the amplifier circuit in the high frequency band

Method used

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  • Semiconductor apparatus
  • Semiconductor apparatus
  • Semiconductor apparatus

Examples

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Effect test

no. 2 example

[0075] In the second embodiment, a plate equivalent to the first source wiring 20 formed over the substrate 23 according to the first embodiment is arranged within the semiconductor device. Figure 15 is a bottom view of the semiconductor device 2 according to the second embodiment. A top view of the semiconductor device 2 is the same as the semiconductor device 1 according to the first embodiment, and thus will not be described. Such as Figure 15 As shown, the semiconductor device 2 according to the second embodiment includes an additional source electrode plate 50 for coupling one end and the other end of the source electrode lead 12 .

[0076] Figure 16 is along Figure 15 A cross-sectional view of the semiconductor device 2 taken along line XVI-XVI. Such as Figure 16 As shown, an additional source electrode plate 50 is formed so as to couple one end and the other end of the source electrode lead 12 and the bottom surface of the resin mold 15 . Figure 17 is along ...

no. 3 example

[0081] In the third embodiment, a resin mold is formed as a high dielectric layer instead of using a dielectric chip. Figure 19 A top view of a semiconductor device 3 according to the third embodiment is shown. Such as Figure 19 As shown, the semiconductor device 3 according to the third embodiment has the same shape as the semiconductor device 1 according to the first embodiment. However, the semiconductor device 3 includes a resin mold 60 instead of the resin mold 15 of the semiconductor device 1 according to the first embodiment.

[0082] Figure 20 is a bottom view of the semiconductor device 3 according to the third embodiment. Such as Figure 20 As shown, the semiconductor device 3 according to the third embodiment has the same shape as the semiconductor device 1 according to the first embodiment. However, the semiconductor device 3 includes a resin mold 60 instead of the resin mold 15 of the semiconductor device 1 according to the first embodiment.

[0083] Fi...

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Abstract

A semiconductor apparatus includes a semiconductor chip, a lead frame that has a first surface having the semiconductor chip mounted thereover and a second surface opposite to the first surface, a bonding wire that couples the semiconductor chip and the lead frame, and a high-dielectric layer that is disposed over a surface of the lead frame opposite to a surface having the semiconductor chip mounted thereover and that has a relative permittivity of 5 or more. The lead frame includes a source electrode lead coupled to the source of a semiconductor device formed over the semiconductor chip and a source-wire junction at which the source electrode lead and the bonding wire are coupled together. The high-dielectric layer is disposed in a region including at least a position corresponding to the source-wire junction over the second surface of the lead frame.

Description

[0001] Cross References to Related Applications [0002] The disclosure of Japanese Patent Application No. 2011-196644 filed on Sep. 9, 2011 including specification, drawings and abstract is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device including a semiconductor chip on which an amplification circuit for amplifying a high-frequency signal is formed. Background technique [0004] Radio signal systems include amplifier circuits for processing high-frequency signals in the microwave frequency range. Among the examples of this amplification circuit is a field effect transistor (FET) including a GaAs substrate. Such a FET including a GaAs substrate will be referred to as a GaAsFET. Semiconductor devices for processing such high-frequency signals require techniques for reducing parasitic capacitance associated with semiconductor chips to improve ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64
CPCH01L23/48H01L2223/6655H01L2224/48257H01L2924/00014H01L2224/49111H01L2924/16152H01L24/48H01L23/047H01L24/49H01L23/66H01L23/49861H01L23/642H01L2224/48247H01L2224/49175H01L2924/30107H01L2924/3011H05K1/0243H05K1/025H05K1/113H05K1/114H01L2924/00H01L2224/45099
Inventor 佐仓直喜
Owner RENESAS ELECTRONICS CORP
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