Measuring method of mid-infrared light signal intensity in wide temperature environment

Abstract

The invention relates to a measuring method of the mid-infrared light signal intensity in wide temperature environment. According to the method, firstly, a measuring device is built, the measuring device comprises a mid-infrared light guide detector, a driving circuit and a signal collection recording instrument, wherein the driving circuit comprises an instrument amplifier unit and a constant flow source unit; secondly, the dark resistance value and the response rate value of the mid-infrared light guide detector at application environment temperature are obtained through measurement, and in addition, the balancing resistance and the magnification time parameter in the driving circuit are determined; and finally, the mid-infrared light signal intensity is obtained through calculation through the voltage signal and the monitored work temperature. The measuring method has the advantages that the optimal solution of the balancing resistance and the circuit magnification times is obtained according to the parameters of the dark resistance valve, the work voltage and the like of each detector at the wide temperature range end point, the output signal amplitude and the measurement dynamic range of a constant flow source type mid-infrared detection circuit are improved, the characteristics of concise step and convenience in realization are realized, and the measuring method can be used for the batch design of the mid-infrared detection circuit.

Description

technical field [0001] The invention relates to a method for measuring the intensity of a mid-infrared light signal, in particular to a method for measuring the change of the mid-infrared light intensity by using a photoconductive type mid-infrared detector. Background technique [0002] Photoconductive mid-infrared detectors such as mercury cadmium telluride and indium antimonide often use a constant current source combined with an instrument amplifier when measuring infrared light intensity parameters. However, when the measurement environment temperature changes greatly, the mid-infrared detector The inherent characteristics of the detector, the dark resistance and responsivity of the detector change with the change of temperature. When the ambient temperature changes, the change of the dark resistance of the photoconductive detector will cause the drift of the output background voltage of the detection circuit. When the detector works in a wide temperature environment, t...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to solve the existing problems in the measurement of mid-infrared light intensity under wide temperature conditions such as small amplitude of measurement output signal and insufficient dynamic range, and improve the measurement uncertainty of the system

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