Parasitic plug-and-play (PNP) component structure and manufacturing method thereof in a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) process

Abstract

The invention discloses a parasitic plug-and-play (PNP) component structure in a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) process. The parasitic PNP component structure in a SiGe HBT process comprises a base region which is formed above a collector region, an N-shaped buried layer and a shallow groove separation, and wherein the shallow groove separation is located above the N-shaped buried layer; metal silicides which are formed on the collector region are connected with metal connecting wires through contact holes; the N-shaped buried layer guides and connects the metal connecting wires through deep contact holes; an emitter region is formed above the base region and the shallow groove separation, and the metal silicides are formed above the emitter region; wherein the metal silicides which are located above the emitter region are located at the bilateral sides above the emitter region, and the metal silicides guides and connects the metal connecting wires through the contact holes; a silica medium layer is located above the emitter region, and an N-shaped polycrystalline silicon layer is located above the silica medium layer. Compared with a conventional parasitic PNP component, the parasitic PNP component structure has the advantages of enhancing the current gain effect, and using as a high speed, high gain output component in a radio frequency circuit.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a parasitic PNP device structure in a SiGe HBT process. The invention also relates to a manufacturing method of the parasitic PNP device structure in the SiGe HBT process. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. In BiCMOS technology, NPN transistors, especially silicon germanium (or silicon germanium carbon) heterojunction transistors (SiGe or SiGeC HBT) are a good choice for UHF devices. Moreover, the SiGe process is basically compatible with the silicon process, so SiGe HBT has become one of the mainstream UHF devices. In this context, its requirements for output devices have also increased accordingly, such as having a certain current gain coefficient (not less than 15) and cutoff frequency. [0003] The conventional SiGe HBT uses a highly doped buried layer of the collector region t...

AI Technical Summary

Problems solved by technology

The technology of this device is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 2. The deep trench isolation process is complicated and the cost is high; 3. The current gain effect is limited

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