Production method of solar cell

A technology for solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of high fragmentation rate of solar cells, large amount of corrosion of silicon wafers, etc., and achieve the effects of good long-wave response, strong reflection, and improved spectral response.

Active Publication Date: 2013-05-22
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Application Information

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Problems solved by technology

[0006] In order to solve the problems in the prior art, such as the large amount of silicon wafer corrosion caused by polishing the back of the silicon wafer with a strong alkaline solution, and the high fragmentation rate in the subsequent process of manufacturing solar cells, the invention discloses a method for preparing solar cells

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  • Production method of solar cell
  • Production method of solar cell

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Embodiment Construction

[0026] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. It should be noted that components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted herein to avoid unnecessarily limiting the present invention.

[0027] refer to figure 1 , figure 1 It is a schematic flow chart of a specific embodiment of a method for preparing a crystalline silicon solar cell according to the present invention.

[0028...

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Abstract

The invention discloses a production method of a crystalline silicon solar cell. The production method includes the steps of texturing the front surface of a silicon wafer; performing P diffusion to the front surface of the silicon wafer, polishing the back of the silicon wafer to generate a SiO2 layer, removing the peripheral P diffusion layer, and removing phosphorosilicate glass on the front surface of the silicon wafer; forming a reflection-degreasing film on the front surface of the silicon wafer; and respectively subjecting the front surface and the back of the silicon wafer to silk screen printing to form electrodes. By the use of the production method, the back surface of the silicon wafer can be bright as a mirror, and reflectivity of the back of the silicon wafer is improved effectively. In addition, the smooth back surface allows for formation of evener aluminum back field. The formed SiO2 layer functions in surface passivation, so that minority carrier lifetime can be prolonged. Photoelectric conversion rate of the solar cell produced by the production method can be improved greatly.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a solar cell. Background technique [0002] With the increasingly severe energy crisis worldwide, more and more scientists are paying attention to the research and utilization of solar energy. Therefore, the photovoltaic industry has developed rapidly in recent years. Solar power generation can effectively solve the consumption of non-renewable energy by traditional power generation methods, and the use of solar power for power generation has become the general trend. The market share of crystalline silicon solar cells in photovoltaic cells remains at about 90%, occupying the dominance of the entire photovoltaic industry, and the cost of silicon wafers is 60% to 70% of the cost of batteries. Research institutes and manufacturing companies research hotspots. [0003] The preparation process of traditional crystalline silicon solar cells is as follows: ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 权微娟李旺刘石勇韩玮智牛新伟蒋前哨李永辉仇展炜
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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