Thermal interface materials and manufacturing method thereof

Abstract

The invention discloses thermal interface materials and a manufacturing method of the thermal interface materials. The interface materials are formed by means of heating and oxidization of metals such as gallium, indium, mercury, sodium, potassium, cesium or binary alloy and multicomponent alloy of the cesium. The manufacturing method comprises the following steps: selecting metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium, and enabling the metals or the alloy to become liquid and enabling the liquid metals or the alloy to be placed in air or oxygen through heating. By means of placing the metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium in the air and the oxygen to be oxidized to form the thermal interface materials, wettability between metal-based fluid and each interface can be greatly enhanced, thereby requirements of the thermal interface materials can be met. Due to the good thermal and wetting properties, the thermal interface materials can play significant roles in an aspect of electric chip thermal conductivity of the fields such as cryogenic engineering, boosters of computers, satellites and rockets and laser device.

Description

technical field [0001] The invention belongs to the technical field of thermal interface materials, and in particular relates to a thermal interface material and a manufacturing method thereof. Background technique [0002] With the development of various electronic products to be short, small, light, and thin, they work under high-performance and high-transmission rates, and the operating temperature of various components (such as CPU, etc.) is relatively high. The heating power is also increasing. For example, the working power of Intel Core i7 quad-core CPU is as high as 130W, and the working power of a single AMD Phenom II 965 (Phenom II) quad-core CPU is as high as 140W. The resulting high temperature will reduce the work of the chip. stability, increase the error rate, and at the same time, the thermal stress formed between the inside of the module and its external environment will directly affect the electrical performance, operating frequency, mechanical strength an...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is: the types and components of the existing thermal interface materials are limited, the wettability of the corresponding materials and the chip substrate is not ideal, and there will still be some gaps on the contact surface after filling the interface

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