Preparation method of silicon nitride membrane in light-trapping structure and preparation device
A technology of silicon nitride film and light-trapping structure, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, ion implantation plating, etc. The problems of high cost, easy to large-scale production, no need to control the concentration of the solution, and reduce the cost of preparation
Inactive Publication Date: 2013-06-05
SHANGHAI UNIV OF ENG SCI
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Problems solved by technology
[0004] The technical problem to be solved in the present invention is: the existing methods for preparing light-trapping structure films on the surface of silicon wafers mainly adopt chemical preparation methods, although these methods can obtain light-trapping structures, but there are waste liquid treatment, solution concentration control and stability control; reactive ion etching technology has complex requirements for equipment and high production costs; honeycomb suede technology still has the problems of complex process and high cost
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[0033] The present invention will be further described below in conjunction with specific examples.
[0034] First of all, cleaning of quartz glass: first use acetone ultrasonic vibration cleaning for 15 minutes; then use absolute alcohol ultrasonic vibration cleaning for 30 minutes; then rinse with deionized water or absolute alcohol for 2 to 3 times and then dry it or use a dryer at a constant temperature drying. Its purpose is to remove oil, impurities, etc. on the surface of quartz glass. In addition, the quartz glass has good water absorption properties.
[0035] Secondly, if Figure 1-Figure 2 As shown, the sputtering growth of silicon nitride film: use the magnetron sputtering coating method to sputter and grow silicon nitride film on the above-mentioned treated quartz glass. During sputtering, the process parameters are set as: background vacuum degree 2.0×10 -4 Pa, the radio frequency sputtering power is 160W, the sputtering pressure is 0.9-1.5Pa, and the sputteri...
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Abstract
The invention relates to a preparation method of a silicon nitride membrane in a light-trapping structure and a preparation device, and belongs to the technical field of the silicon nitride membrane in the light-trapping structure. The preparation method of the silicon nitride membrane in the light-trapping structure is characterized by comprising the steps of washing quartz glass (1); fixing the quartz glass and a silicon nitride target material (3) in a coating device in an up-down correspondence mode, wherein the coating device is provided with an inflation port and an vacuum port; vacuumizing the coating device until the pressure of the coating device is superior to 2.1*10-4Pa; Ar gas is filled into the coating device to serve as sputtering gas; and a permanent magnet (2) is arranged between the silicon nitride target material (3) and the quartz glass, wherein the direction of the magnetic field is upward. The lower surface of the quartz glass (1) forms the silicon nitride membrane in the light-trapping structure.
Description
technical field [0001] The invention relates to a preparation method and a preparation device of a silicon nitride film with a light-trapping structure, and belongs to the technical field of a silicon nitride film with a light-trapping structure. Background technique [0002] The increasing scarcity of energy and the increasingly serious environmental problems have greatly promoted the rapid development of the photovoltaic industry. Low cost and high photoelectric conversion efficiency are important indicators for the application of solar cells. As a green energy source, solar energy has unique advantages such as unlimited storage capacity, inexhaustible supply, no need for long-distance transportation, clean and pollution-free, universal utilization, etc. The use of solar energy will not destroy the thermal balance of the earth, nor will it Subject to geographical restrictions. This makes solar energy play an extremely important role in the transformation of energy structu...
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IPC IPC(8): C23C14/34C23C14/06H01L31/18
CPCY02P70/521Y02P70/50
Inventor 江强郭雪梅周细应毛秀娟陈明邵佳佳杨秋杰
Owner SHANGHAI UNIV OF ENG SCI