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Method for forming self-aligned metal silicide

A technology of metal silicide and metal silicide layer, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor electrical performance of metal silicide, and achieve the effect of high device quality

Active Publication Date: 2013-06-05
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the electrical properties of the metal silicide formed by the prior art are poor

Method used

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  • Method for forming self-aligned metal silicide
  • Method for forming self-aligned metal silicide
  • Method for forming self-aligned metal silicide

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Embodiment Construction

[0028] It can be seen from the background technology that the metal silicide formed by the prior art has poor electrical properties. Therefore, the inventors of the present invention have carried out in-depth research on the metal silicide formation method of the prior art, and found that: the existing nickel metal layer is directly used React with silicon to form a metal silicide layer. The metal elements in the metal silicide layer are unstable, and the metal elements are easy to diffuse into the substrate, which disrupts the lattice structure of silicon atoms in the source and drain regions, which is even worse. Ground, metal elements will diffuse to the bottom of the channel, causing leakage current at the source, drain, and substrate contacts.

[0029] In view of the above-mentioned defects, the inventor conducted further research and found that: a nickel-platinum alloy target is sputtered by a physical vapor deposition process, thereby forming a nickel-platinum alloy meta...

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Abstract

The invention relates to a method for forming self-aligned metal silicide. The method comprises the following steps of: providing a semiconductor substrate, wherein at least one silicon region is formed on the surface of the semiconductor substrate; forming an ion-implanted region on the silicon region; forming a silicon epitaxial layer which covers the surface of the ion-implanted region; forming a nickel metal layer which covers the silicon epitaxial layer; forming a first metal silicide layer on the surface of the silicon region and in the silicon epitaxial layer by a first annealing process; removing the unreacted nickel metal layer; and annealing the first metal silicide layer by a second annealing process to form a second metal silicide layer. The metal silicide layers formed by the method in the embodiment of the invention are high in quality, and the electric properties of a device are high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a self-aligned metal silicide. Background technique [0002] In semiconductor manufacturing technology, metal silicide is widely used in source / drain contacts and gate contacts to reduce contact resistance due to its low resistivity and good adhesion with other materials. Metals with high melting points react with silicon to form metal silicides, and metal silicides with low resistivity can be formed through one-step or multi-step annealing process. With the improvement of the semiconductor process level, especially at the technology node of 90nm and below, in order to obtain lower contact resistance, nickel and nickel alloys have become the main materials for forming metal silicides. [0003] In the published US patent application with publication number US2009309228A1, a method for forming a salicide is disclosed, in which a nickel alloy is selec...

Claims

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Application Information

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IPC IPC(8): H01L21/285
Inventor 鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
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