Doped graphene flexible transparent electrode and preparation method thereof

A transparent electrode and vinyl flexible technology, applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of reduced mobility and reduced current-carrying density at grain boundaries, and achieve high light transmittance and low resistance.

Active Publication Date: 2013-06-12
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the large-area graphene prepared by CVD is a polycrystalline structure with more defects and grain boundaries. These defects lead to a decrease in the current-carrying density, and on the other hand, the grain boundaries reduce the mob

Method used

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  • Doped graphene flexible transparent electrode and preparation method thereof
  • Doped graphene flexible transparent electrode and preparation method thereof
  • Doped graphene flexible transparent electrode and preparation method thereof

Examples

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Embodiment 1

[0036] like figure 1 As shown, using non-replacement doping, the preparation method of the doped graphene flexible transparent electrode of the present embodiment comprises the following steps:

[0037] 1) Using chemical vapor deposition method, graphene is grown on the substrate under the condition of gaseous carbon source and protective gas;

[0038] 2) Transfer the graphene grown on the substrate to a flexible transparent substrate to obtain a graphene flexible transparent conductive film;

[0039] 3) Soak and dope the graphene flexible transparent conductive film in a solution containing a chemical doping agent to obtain a doped graphene flexible transparent conductive film;

[0040] 4) Cut and shape the doped graphene flexible transparent conductive film to obtain a doped graphene flexible transparent electrode.

[0041] In the step 1), the preferred process conditions are: the substrate is copper foil, the gas carbon source is methane, the protective gas is nitrogen, t...

Embodiment 2

[0045] The difference between this example and Example 1 lies in step 3). In this example, the graphene flexible transparent conductive film is doped with metal nanoparticles. The specific doping method is: preparing metal nanoparticles of required size, Nanoparticles of different shapes such as nanowires (the metal nanoparticles are preferably selected from one or more of Au, Ag, Fe, Cu, and Pt), uniformly coated on the graphene surface on a flexible transparent substrate, and multi-stage The temperature-programmed annealing treatment forms the graphene doped with metal nanoparticles, and obtains a flexible transparent conductive film doped with graphene.

[0046] The sheet resistance of the graphene-doped flexible transparent electrode prepared in this example is between 20-150 Ω / sq, and the light transmittance is between 90.1-95.5%.

Embodiment 3

[0048] The difference between this example and Example 1 lies in step 3). In this example, the graphene flexible transparent conductive film is doped with metal nanoparticles. The specific doping method is: the mixture of the metal precursor and the reducing agent Uniformly coat the surface of graphene on a flexible transparent substrate, and then reduce the precursor by ultraviolet light to obtain metal nanoparticles uniformly dispersed on the surface of graphene, and wash off other reaction products with water to form graphene doped with metal nanoparticles , to obtain doped graphene flexible transparent conductive film.

[0049] The sheet resistance of the graphene-doped flexible transparent electrode prepared in this example is between 5 and 150 Ω / sq, and the light transmittance is between 89.0 and 96.8%.

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Abstract

The invention discloses a doped graphene flexible transparent electrode and a preparation method thereof. The doped graphene flexible transparent electrode consists of a flexible transparent substrate and doped graphene which is arranged on the flexible transparent substrate and is doped with heterogeneous atoms and molecules. The doping methods of graphene comprise non-substitutional doping, substitutional doping and composite doping. By using the graphene which grows through chemical vapor deposition (CVD) as raw materials, realizing the doping of the heterogeneous atoms and molecules of the graphene by chemical means and using the doped graphene to construct the flexible transparent electrode, the prepared doped graphene flexible transparent electrode has excellent properties of low resistance, high light transmittance and high bendability. The square resistance of the electrode reaches 3-500ohm/sq, the light transmittance reaches 87.4-97.6 percent, and the doped graphene flexible transparent electrode is superior to the existing transparent electrodes which are prepared by using indium tin oxide (ITO), carbon nanotube films and the like.

Description

technical field [0001] The invention relates to the technical field of flexible transparent electrode materials, in particular to a graphene-doped flexible transparent electrode and a preparation method thereof. Background technique [0002] Transparent conductive electrode materials are widely used in touch screens, flat panel displays, light emitting devices, solar cells and other fields. The current electronic devices are mainly on hard substrates, while flexible devices have gradually attracted more and more people's attention, which is the trend of future development. As a semi-metallic material, graphene has a well-developed flexible pore structure, which determines its flexibility; the carrier concentration inside graphene is as high as 10 13 cm -2 , its theoretical mobility can reach 200,000 cm 2 / V s, and the light transmittance of graphene reaches 97.7%. These unique and excellent properties make graphene one of the most potential substitutes for transparent e...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B1/04H01B1/02H01B13/00
Inventor 黄德萍史浩飞李占成刘海燕张永娜李朝龙魏东山汤林龙魏大鹏杜春雷
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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