Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Granular evaporation material, film forming method of evaporation film, and evaporation film

A film-forming method and granular technology, which is applied in the field of vapor deposition, can solve the problems of labor and time consumption, increased production cost, and impurities mixed in, and achieve the effect of low energy

Inactive Publication Date: 2013-06-19
MITSUBISHI MATERIALS CORP
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, the film-forming materials shown in the above-mentioned conventional Patent Documents 1 to 3 require press working during molding, which takes time and cost, and impurities may be mixed in from the mold or jig used during the press working during molding. possibility
In addition, in the spherical molded body shown in the above-mentioned conventional patent document 4, both the raw material powder and the binder must be fed simultaneously when the spherical molded body is grown to a desired size, and since there are two parameters, the adjustment variable difficult
In addition, in the porous sintered body disclosed in the above-mentioned conventional patent document 5, it is necessary to prepare a slurry by mixing oxide powder, a binder, and an organic solvent as a raw material powder under reduced pressure, and further spray the slurry. Due to the drying process, it takes labor and time to manufacture, and as a result, the production cost increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Granular evaporation material, film forming method of evaporation film, and evaporation film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] First, prepare high-purity WO with an average particle size of 1.2 μm and a purity of 99.7% as a raw material powder. 3 powder, prepare polyvinyl butyral as a binder, prepare acetone and ethanol as an organic solvent, and mix polyvinyl butyral, acetone, and ethanol at a mass ratio of 2.5:12.5:85 to prepare an adhesive. mixture liquid.

[0043] Next, put 100g of the raw material powder into the bowl of a rotary vane type small granulator (KAWATA Corporation; SUPERMIXER PICCOLO), and add a total of 20g of the above-prepared binder solution into 3 times of 8g, 8g, and 4g, each time When the binder solution was injected, the mixture was stirred at a rotation speed of 750 rpm for 30 seconds, thereby granulating, and granules having an average particle diameter of 1 mm were prepared.

[0044] Next, as a firing step, in order to remove the organic solvent, the temperature was raised from room temperature to 70°C within 1 hour and kept at 70°C for 1 hour, and in order to remov...

Embodiment 2、3

[0047] Except having set the average particle diameter of a vapor deposition material to 5 mm and 10 mm, it carried out similarly to Example 1, and formed a particulate vapor deposition material and formed a vapor deposition film into a film.

Embodiment 4～6

[0049] Using high-purity WO with an average particle size of 1.2μm and a purity of 99.7% 2.5 Except that the powder was used as a raw material powder, a particulate vapor deposition material was formed and a vapor deposition film was formed in the same manner as in Examples 1 to 3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

* The invention provides a granular evaporation material, a film forming method of an evaporation film, and the evaporation film, which is an oxide thin film formed by low-splashing in a vacuum evaporation method with a high film forming rate. The granular evaporation material of the invention is characterized in that: the granular evaporation material is composed of granules with 1-10mm of average grain diameter, wherein the granules are formed by granulating a raw material powder of WO3-x (wherein, 0<=x<=1) with purity higher than 98% and lower than 100%. In addition, the film forming method of the evaporation film in the invention is characterized in that: the film forming method are formed by means of the granular evaporation material and in a resistance heating method, an electron beam evaporation method or a reactive plasma evaporation method.

Description

technical field [0001] The present invention relates to a granular vapor deposition material for forming a vapor deposition film with a high film formation rate and low sputtering by a vacuum vapor deposition method, a method for forming a vapor deposition film, and a vapor deposition film formed using the vapor deposition material. In particular, the present invention relates to a granular vapor deposition method for forming a vapor deposition film having a high water vapor barrier property in electronic devices such as liquid crystal displays, organic EL displays, or solar cells, or packaging materials for food and pharmaceuticals, etc. The material and the film-forming method of the vapor-deposition film and the vapor-deposition film formed by using the vapor-deposition material. Background technique [0002] Devices such as liquid crystal displays, organic EL displays, or solar cells are generally not resistant to moisture, and their characteristics rapidly deteriorate d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08
Inventor 吉田勇气樱井英章
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com