Method for manufacturing LED package

A technology of LED packaging and manufacturing method, applied in electrical components, electric solid devices, circuits, etc., can solve the problems of shortened life of LED packaging, poor thermal conductivity of insulating layer, yellowing radiation efficiency, etc., to improve light irradiation efficiency and improve heat dissipation. Efficiency, the effect of simplifying the manufacturing process

Active Publication Date: 2013-06-19
AP TECH CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the thermal conductivity of the insulating layer formed on the metal substrate is poor, so even if the metal substrate is used, the problem of low thermal conductivity cannot be avoided.
[0007] Therefore, if the heat dissipation of the LED chip cannot be realized normally, the LED chip as a semiconductor component will hav

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing LED package
  • Method for manufacturing LED package
  • Method for manufacturing LED package

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] Matters such as the technical constitution and operational effects of the above-mentioned object of the manufacturing method of the LED package according to the present invention will be more clearly understood by referring to the following detailed description of the accompanying drawings showing preferred embodiments of the present invention.

[0028] figure 1 Is a cross-sectional view showing the LED package according to the present invention, figure 2 It is a plan view showing the LED package according to the present invention.

[0029] As shown in the figure, the LED package 100 according to the present invention may include: a metal substrate 110, which has an anode terminal 111 and a cathode terminal 112; an LED chip 120, which is mounted on the metal substrate 110; and a plastic part 130, which is packaged on the metal substrate 110 on; and the lens part 140, which is integrally formed with the plastic part 130.

[0030] The above-mentioned metal substrate 110 may be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a method for manufacturing an LED package. A method for manufacturing an LED package of the present invention comprises the steps of: preparing a metal member which is cut in a strip form; forming, on said metal member, a metal substrate in which an anode terminal and a cathode terminal are formed at predetermined intervals; mounting an LED chip on a chip-mounting portion of said metal substrate; wire-bonding said LED chip with the anode terminal and the cathode terminal; and integrally forming a molding unit and a lens unit at the upper part of said metal substrate.

Description

technical field [0001] The invention relates to a method for manufacturing an LED package, more particularly to a method for manufacturing an LED package that directly mounts an LED chip on a metal substrate to improve heat dissipation efficiency. Background technique [0002] Generally, a light emitting diode (LED: light emitting diode, hereinafter referred to as LED) is a diode that flows current in a semiconductor pn junction to emit light. Gallium arsenide (GaAs) is a light emitting diode used for infrared rays, gallium aluminum arsenide (GaAIAs) ) is used as an infrared or red light-emitting diode, gallium arsenide phosphide (GaAsP) is used as a red, orange or yellow light-emitting diode, gallium phosphide (GaP) is used as a red, green or yellow light-emitting diode, nitrogen Gallium nitride (GaN) is a white light-emitting diode that emits white light by mixing rare-earth materials chromium, thulium, and terbium with phosphors used as active ions. [0003] In addition,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/48H01L33/62
CPCH01L24/97H01L25/0753H01L33/54H01L33/62H01L2224/48091H01L2924/12041H01L2924/181H01L2924/1815H01L2933/005H01L2924/00014H01L2924/00H01L33/48H01L33/58
Inventor 朱宰哲金荣锡
Owner AP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products