Manufacturing method of thin-film capacitor and thin-film capacitor obtained through manufacturing method
A technology of film capacitors and manufacturing methods, applied in the direction of film/thick film capacitors, fixed capacitor dielectrics, laminated capacitors, etc., can solve the problems of insulation withstand voltage drop, leakage current increase, etc., to suppress the generation of hillocks, leakage Excellent current characteristics and insulation withstand voltage characteristics
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Embodiment 1
[0046] First, if figure 1 As shown, an insulator film 12 is formed on a substrate 11 . Specifically, a 500-nm-thick SiO 2 membrane. Secondly, by sputtering method on the above SiO 2 A metal Ti film was formed on the film, and heat-treated at 700° C. for 1 minute to form an adhesion layer 13 with a thickness of 30 nm.
[0047] Next, using Pt as a noble metal material, a lower electrode 14 with a thickness of 100 nm was formed on the above-mentioned adhesion layer 13 by a sputtering method. The crystal orientation in the lower electrode 14 is formed to be preferentially oriented to the (111) plane. In addition, the average crystal grain size in the lower electrode 14 was adjusted to 40 nm. Thus, a support body 20 composed of the substrate 11 , the insulator film 12 formed on the substrate 11 , and the lower electrode 14 formed on the insulator film 12 via the adhesive layer 13 is obtained.
[0048] Next, a thin film forming precursor solution is prepared. Specifically, fi...
Embodiment 2
[0052] A film capacitor was obtained in the same manner as in Example 1 except that a dielectric film was formed on the lower electrode having a thickness of 200 nm and a residual stress of the value shown in Table 1 below. This film capacitor was referred to as Example 2.
Embodiment 3
[0054] A film capacitor was obtained in the same manner as in Example 1 except that a dielectric thin film was formed on the lower electrode having a thickness of 300 nm and an average crystal grain size and residual stress as shown in Table 1 below. This film capacitor was referred to as Example 3.
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Abstract
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